2N3495

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2N3495

Category	Discrete Semiconductor Products Transistors Bipolar (BJT) Bipolar RF Transistors
Current - Collector (Ic) (Max)	100mA
Product Status	Active
Transistor Type	PNP
Mounting Type	Through Hole
Frequency - Transition	150MHz
Package	Bulk
Series	-
Voltage - Collector Emitter Breakdown (Max)	120V
Supplier Device Package	TO-5AA
Mfr	Microchip Technology
Noise Figure (dB Typ @ f)	-
Power - Max	400mW
Gain	-
Package / Case	TO-205AA, TO-5-3 Metal Can
Operating Temperature	-65°C ~ 200°C (TJ)
DC Current Gain (hFE) (Min) @ Ic, Vce	40 @ 50mA, 10V
Description	SMALL-SIGNAL BJT

Detailed Product Description

RF Transistor PNP 120V 100mA 150MHz 400mW Through Hole TO-5AA

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