MIEB101H1200EH

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Beijing Silk Road Enterprise Management Services Co.,LTD

Country/Region:china

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MIEB101H1200EH

Category	Discrete Semiconductor Products Transistors IGBTs IGBT Modules
Current - Collector (Ic) (Max)	183 A
Product Status	Active
Mounting Type	Chassis Mount
Package	Box
Series	-
Package / Case	E3
Vce(on) (Max) @ Vge, Ic	2.2V @ 15V, 100A
Voltage - Collector Emitter Breakdown (Max)	1200 V
Supplier Device Package	E3
Mfr	IXYS
Operating Temperature	-40°C ~ 125°C (TJ)
Current - Collector Cutoff (Max)	300 µA
IGBT Type	-
Power - Max	630 W
Input	Standard
Input Capacitance (Cies) @ Vce	7.43 nF @ 25 V
Configuration	Full Bridge Inverter
NTC Thermistor	No
Base Product Number	MIEB101
Description	IGBT MODULE 1200V 183A 630W E3

Detailed Product Description

IGBT Module Full Bridge Inverter 1200 V 183 A 630 W Chassis Mount E3

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