FAM65HR51DS2

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Beijing Silk Road Enterprise Management Services Co.,LTD

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FAM65HR51DS2

Category	Discrete Semiconductor Products Transistors IGBTs IGBT Modules
Current - Collector (Ic) (Max)	33 A
Product Status	Active
Mounting Type	Through Hole
Package	Tube
Series	-
Vce(on) (Max) @ Vge, Ic	-
Voltage - Collector Emitter Breakdown (Max)	650 V
Mfr	onsemi
Operating Temperature	-55°C ~ 150°C (TJ)
Power - Max	135 W
IGBT Type	-
Input	Standard
Input Capacitance (Cies) @ Vce	4.86 nF @ 400 V
Configuration	Half Bridge Inverter
NTC Thermistor	No
Base Product Number	FAM65
Description	IGBT MODULE 650V 33A 135W

Detailed Product Description

IGBT Module Half Bridge Inverter 650 V 33 A 135 W Through Hole

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