TC58BVG0S3HBAI4 IC FLASH 1GBIT PARALLEL 63TFBGA Kioxia America, Inc.

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Sanhuang electronics (Hong Kong) Co., Limited

City: shenzhen

Country/Region:china

Tel:86-755-88859989

Contact Person:
Miss.Zhao View Contact Details

TC58BVG0S3HBAI4 IC FLASH 1GBIT PARALLEL 63TFBGA Kioxia America, Inc.

Brand Name	Kioxia America, Inc.
Model Number	TC58BVG0S3HBAI4
Minimum Order Quantity	1
Price	Based on current price
Payment Terms	T/T
Supply Ability	In stock
Delivery Time	3-5 work days
Packaging Details	anti-static bag & cardboard box
Memory Type	Non-Volatile
Memory Format	FLASH
Technology	FLASH - NAND (SLC)
Memory Size	1Gbit
Memory Organization	128M x 8
Memory Interface	Parallel
Clock Frequency	-
Write Cycle Time - Word, Page	25ns
Access Time	25 ns
Voltage - Supply	2.7V ~ 3.6V
Operating Temperature	-40°C ~ 85°C (TA)
Mounting Type	Surface Mount
Package / Case	63-VFBGA
Supplier Device Package	63-TFBGA (9x11)

Detailed Product Description

Product Details

85 ºC, High Ripple, General Purpose Capacitor

Type TC is an axial leaded, 85 ºC, 1000 hour long life general purpose aluminum electrolytic capacitor with a high ripple current rating and is suitable for consumer electronic equipment applications.

Highlights

• General purpose
• High ripple current
• Low profile mounting

Specifications

Attribute	Attribute Value
Manufacturer	Toshiba Semiconductor and Storage
Product Category	Memory ICs
Series	Benand™
Packaging	Tray
Package-Case	63-VFBGA
Operating-Temperature	-40°C ~ 85°C (TA)
Interface	Parallel
Voltage-Supply	2.7 V ~ 3.6 V
Supplier-Device-Package	63-TFBGA (9x11)
Memory Capacity	1G (128M x 8)
Memory-Type	EEPROM - NAND
Speed	25ns
Format-Memory	EEPROMs - Serial

Descriptions

FLASH - NAND (SLC) Memory IC 1Gb (128M x 8) Parallel 25ns 63-TFBGA (9x11)

SLC NAND Flash Parallel 3.3V 1G-bit

EEPROM 3.3V, 1 Gbit CMOS NAND EEPROM

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