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Sanhuang electronics (Hong Kong) Co., Limited
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AT26DF161A-MU IC FLASH 16MBIT SPI 70MHZ 8VDFN Renesas Design Germany GmbH

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Sanhuang electronics (Hong Kong) Co., Limited

City: shenzhen

Country/Region:china

Tel:86-755-88859989

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Miss.Zhao
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AT26DF161A-MU IC FLASH 16MBIT SPI 70MHZ 8VDFN Renesas Design Germany GmbH

Brand Name Renesas Design Germany GmbH
Model Number AT26DF161A-MU
Minimum Order Quantity 1
Price Based on current price
Payment Terms T/T
Supply Ability In stock
Delivery Time 3-5 work days
Packaging Details anti-static bag & cardboard box
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH
Memory Size 16Mbit
Memory Organization 256 Bytes x 8192 pages
Memory Interface SPI
Clock Frequency 70 MHz
Write Cycle Time - Word, Page 7µs, 5ms
Access Time -
Voltage - Supply 2.7V ~ 3.6V
Operating Temperature -40°C ~ 85°C (TC)
Mounting Type Surface Mount
Package / Case 8-VDFN Exposed Pad
Supplier Device Package 8-VDFN (6x5)
Detailed Product Description

Product Details

 

Description

The AT26DF161A is a serial interface Flash memory device designed for use in a wide variety of high-volume consumer-based applications in which program code is shadowed from Flash memory into embedded or external RAM for execution. The flexible erase architecture of the AT26DF161A, with its erase granularity as small as 4 Kbytes, makes it ideal for data storage as well, eliminating the need for additional data storage EEPROM devices.

 

 

Features

• Single 2.7V - 3.6V Supply
• Serial Peripheral Interface (SPI) Compatible
– Supports SPI Modes 0 and 3
• 70 MHz Maximum Clock Frequency
• Flexible, Uniform Erase Architecture
– 4-Kbyte Blocks
– 32-Kbyte Blocks
– 64-Kbyte Blocks
– Full Chip Erase
• Individual Sector Protection with Global Protect/Unprotect Feature
– Thirty-two 64-Kbyte Physical Sectors
• Hardware Controlled Locking of Protected Sectors
• Flexible Programming Options
– Byte/Page Program (1 to 256 Bytes)
– Sequential Program Mode Capability
• Automatic Checking and Reporting of Erase/Program Failures
• JEDEC Standard Manufacturer and Device ID Read Methodology
• Low Power Dissipation
– 5 mA Active Read Current (Typical)
– 10 µA Deep Power-down Current (Typical)
• Endurance: 100,000 Program/Erase Cycles
• Data Retention: 20 Years
• Complies with Full Industrial Temperature Range
• Industry Standard Green (Pb/Halide-free/RoHS Compliant) Package Options
– 8-lead SOIC (150-mil and 200-mil wide)
– 8-contact MLF (5 x 6 mm)

 

Specifications

AttributeAttribute Value
ManufacturerAdesto Technologies
Product CategoryMemory ICs
Series-
PackagingTray
Package-Case8-VDFN Exposed Pad
Operating-Temperature-40°C ~ 85°C (TC)
InterfaceSPI Serial
Voltage-Supply2.7 V ~ 3.6 V
Supplier-Device-Package8-VDFN (6x5)
Memory Capacity16M (8192 pages x 256 bytes)
Memory-TypeDataFLASH
Speed70MHz
Format-MemoryFLASH

Descriptions

FLASH Memory IC 16Mb (256 Bytes x 8192 pages) SPI 70MHz 8-VDFN (6x5)
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