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Sanhuang electronics (Hong Kong) Co., Limited
Sanhuang Electronics (Hong Kong) Co., Limite
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IS61WV5128BLL-10BLI IC SRAM 4MBIT PARALLEL 36TFBGA ISSI, Integrated Silicon Solution Inc

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Sanhuang electronics (Hong Kong) Co., Limited

City: shenzhen

Country/Region:china

Tel:86-755-88859989

Contact Person:
Miss.Zhao
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IS61WV5128BLL-10BLI IC SRAM 4MBIT PARALLEL 36TFBGA ISSI, Integrated Silicon Solution Inc

Brand Name ISSI, Integrated Silicon Solution Inc
Model Number IS61WV5128BLL-10BLI
Minimum Order Quantity 1
Price Based on current price
Payment Terms T/T
Supply Ability In stock
Delivery Time 3-5 work days
Packaging Details anti-static bag & cardboard box
Memory Type Volatile
Memory Format SRAM
Technology SRAM - Asynchronous
Memory Size 4Mbit
Memory Organization 512K x 8
Memory Interface Parallel
Clock Frequency -
Write Cycle Time - Word, Page 10ns
Access Time 10 ns
Voltage - Supply 2.4V ~ 3.6V
Operating Temperature -40°C ~ 85°C (TA)
Mounting Type Surface Mount
Package / Case 36-TFBGA
Supplier Device Package 36-TFBGA (6x8)
Detailed Product Description

Product Details

 

DESCRIPTION

TheISSIIS61WV102416ALL/BLL and IS64WV102416BLL are high-speed, 16M-bit static RAMs organized as 1024K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices.

 

 

FEATURES

• High-speed access times: 8, 10, 20 ns
• High-performance, low-power CMOS process
• Multiple center power and ground pins for greater noise immunity
• Easy memory expansion with CE and OE options
• CE power-down
• Fully static operation: no clock or refresh required
• TTL compatible inputs and outputs
• Single power supply
VDD 1.65V to 2.2V (IS61WV102416ALL)
speed = 20ns for VDD 1.65V to 2.2V
VDD 2.4V to 3.6V (IS61/64WV102416BLL)
speed = 10ns for VDD 2.4V to 3.6V
speed = 8ns for VDD 3.3V + 5%
• Packages available:
– 48-ball miniBGA (9mm x 11mm)
– 48-pin TSOP (Type I)
• Industrial and Automotive Temperature Support
• Lead-free available
• Data control for upper and lower bytes

 

Specifications

AttributeAttribute Value
ManufacturerISSI
Product CategoryMemory ICs
SeriesIS61WV5128BLL
TypeAsynchronous
PackagingTray Alternate Packaging
Unit-Weight0.008042 oz
Mounting-StyleSMD/SMT
Package-Case36-MBGA
Operating-Temperature-40°C ~ 85°C (TA)
InterfaceParallel
Voltage-Supply2.4 V ~ 3.6 V
Supplier-Device-Package36-miniBGA (8x10)
Memory Capacity4M (512K x 8)
Memory-TypeSRAM - Asynchronous
Speed10ns
Data-RateSDR
Access-Time10 ns
Format-MemoryRAM
Maximum Operating Temperature+ 85 C
Operating temperature range- 40 C
Interface-TypeParallel
Organization512 k x 8
Supply-Current-Max45 mA
Supply-Voltage-Max3.6 V
Supply-Voltage-Min2.4 V
Package-CaseBGA-36

Functional compatible component

Form,Package,Functional compatible component

 

Manufacturer Part#DescriptionManufacturerCompare
IS61WV5128BLL-10BI
Memory
Standard SRAM, 512KX8, 10ns, CMOS, PBGA36, 6 X 8 MM, MINI, BGA-36Integrated Silicon Solution IncIS61WV5128BLL-10BLI vs IS61WV5128BLL-10BI

Descriptions

SRAM - Asynchronous Memory IC 4Mb (512K x 8) Parallel 10ns 36-miniBGA (8x10)
SRAM Chip Async Single 2.5V/3.3V 4M-Bit 512K x 8 10ns 36-Pin Mini-BGA
SRAM 4M (512Kx8) 10ns Async SRAM 3.3v
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