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Sanhuang electronics (Hong Kong) Co., Limited
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MR4A16BYS35 IC RAM 16MBIT PARALLEL 54TSOP2 Everspin Technologies Inc.

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Sanhuang electronics (Hong Kong) Co., Limited

City: shenzhen

Country/Region:china

Tel:86-755-88859989

Contact Person:
Miss.Zhao
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MR4A16BYS35 IC RAM 16MBIT PARALLEL 54TSOP2 Everspin Technologies Inc.

Brand Name Everspin Technologies Inc.
Model Number MR4A16BYS35
Minimum Order Quantity 1
Price Based on current price
Payment Terms T/T
Supply Ability In stock
Delivery Time 3-5 work days
Packaging Details anti-static bag & cardboard box
Memory Type Non-Volatile
Memory Format RAM
Technology MRAM (Magnetoresistive RAM)
Memory Size 16Mbit
Memory Organization 1M x 16
Memory Interface Parallel
Clock Frequency -
Write Cycle Time - Word, Page 35ns
Access Time 35 ns
Voltage - Supply 3V ~ 3.6V
Operating Temperature 0°C ~ 70°C (TA)
Mounting Type Surface Mount
Package / Case 54-TSOP (0.400", 10.16mm Width)
Supplier Device Package 54-TSOP2
Detailed Product Description

Product Details

MR3 Reflector Lamp Assemblies

MR4 Reflector Lamp Assemblies

MR6 Reflector Lamp Assemblies

Adjustable Focus Reflector Assemblies

Specifications

AttributeAttribute Value
ManufacturerEverspin
Product CategoryMemory ICs
SeriesMR4A16B
PackagingTray Alternate Packaging
Mounting-StyleSMD/SMT
Package-Case54-TSOP (0.400", 10.16mm Width)
Operating-Temperature0°C ~ 70°C (TA)
InterfaceParallel
Voltage-Supply3 V ~ 3.6 V
Supplier-Device-Package54-TSOP2
Memory Capacity16M (1M x 16)
Memory-TypeMRAM (Magnetoresistive RAM)
Speed35ns
Access-Time35 ns
Format-MemoryRAM
Maximum Operating Temperature+ 70 C
Operating temperature range0 C
Operating-Supply-Current110 mA
Interface-TypeParallel
Organization1 M x 16
Data-Bus-Width16 bit
Supply-Voltage-Max3.6 V
Supply-Voltage-Min3 V
Package-CaseTSOP-54
Functional compatible componentForm,Package,Functional compatible component
Manufacturer Part#DescriptionManufacturerCompare
MR4A16BYS35R
Memory
Memory Circuit, 1MX16, CMOS, PDSO54, TSOP2-54Everspin TechnologiesMR4A16BYS35 vs MR4A16BYS35R
MR4A16BCYS35R
Memory
Memory Circuit, 1MX16, CMOS, PDSO54, TSOP2-54Everspin TechnologiesMR4A16BYS35 vs MR4A16BCYS35R
MR4A16BMYS35R
Memory
Memory Circuit, 1MX16, CMOS, PDSO54, ROHS COMPLIANT, MS-024, TSOP2-54Everspin TechnologiesMR4A16BYS35 vs MR4A16BMYS35R
MR4A16BMYS35
Memory
Memory Circuit, 1MX16, CMOS, PDSO54, ROHS COMPLIANT, MS-024, TSOP2-54Everspin TechnologiesMR4A16BYS35 vs MR4A16BMYS35
MR4A16BCYS35
Memory
Memory Circuit, 1MX16, CMOS, PDSO54, TSOP2-54Everspin TechnologiesMR4A16BYS35 vs MR4A16BCYS35

Descriptions

MRAM (Magnetoresistive RAM) Memory IC 16Mb (1M x 16) Parallel 35ns 54-TSOP2
MRAM 16Mbit Parallel 3.3V 54-Pin TSOP Tray
NVRAM 16Mb 3.3V 35ns 1Mx16 Parallel MRAM
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