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Sanhuang electronics (Hong Kong) Co., Limited
Sanhuang Electronics (Hong Kong) Co., Limite
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W9725G8KB-25 TR IC DRAM 256MBIT PARALLEL 60WBGA Winbond Electronics

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Sanhuang electronics (Hong Kong) Co., Limited

City: shenzhen

Country/Region:china

Tel:86-755-88859989

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Miss.Zhao
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W9725G8KB-25 TR IC DRAM 256MBIT PARALLEL 60WBGA Winbond Electronics

Brand Name Winbond Electronics
Model Number W9725G8KB-25 TR
Minimum Order Quantity 1
Price Based on current price
Payment Terms T/T
Supply Ability In stock
Delivery Time 3-5 work days
Packaging Details anti-static bag & cardboard box
Memory Type Volatile
Memory Format DRAM
Technology SDRAM - DDR2
Memory Size 256Mbit
Memory Organization 32M x 8
Memory Interface Parallel
Clock Frequency 200 MHz
Write Cycle Time - Word, Page 15ns
Access Time 400 ps
Voltage - Supply 1.7V ~ 1.9V
Operating Temperature 0°C ~ 85°C (TC)
Mounting Type Surface Mount
Package / Case 60-TFBGA
Supplier Device Package 60-WBGA (8x12.5)
Detailed Product Description

Product Details

 

GENERAL DESCRIPTION

The W9725G8JB is a 256M bits DDR2 SDRAM, organized as 8,388,608 words x 4 banks x 8 bits. This device achieves high speed transfer rates up to 1066Mb/sec/pin (DDR2-1066) for general applications. W9725G8JB is sorted into the following speed grades: -18, -25, 25I and -3. The -18 is compliant to the DDR2-1066 (7-7-7) specification. The -25/25I are compliant to the DDR2-800 (5-5-5) or DDR2-800 (6-6-6) specification (the 25I industrial grade which is guaranteed to support -40°C ≤ TCASE ≤ 95°C). The -3 is compliant to the DDR2-667 (5-5-5) specification.

 

 

FEATURES

• Power Supply: VDD, VDDQ = 1.8 V ± 0.1 V
• Double Data Rate architecture: two data transfers per clock cycle
• CAS Latency: 3, 4, 5, 6 and 7
• Burst Length: 4 and 8
• Bi-directional, differential data strobes (DQS and DQS ) are transmitted / received with data
• Edge-aligned with Read data and center-aligned with Write data
• DLL aligns DQ and DQS transitions with clock
• Differential clock inputs (CLK and CLK )
• Data masks (DM) for write data.
• Commands entered on each positive CLK edge, data and data mask are referenced to both edges of DQS
• Posted CAS programmable additive latency supported to make command and data bus efficiency
• Read Latency = Additive Latency plus CAS Latency (RL = AL + CL)
• Off-Chip-Driver impedance adjustment (OCD) and On-Die-Termination (ODT) for better signal quality
• Auto-precharge operation for read and write bursts
• Auto Refresh and Self Refresh modes
• Precharged Power Down and Active Power Down
• Write Data Mask
• Write Latency = Read Latency - 1 (WL = RL - 1)
• Interface: SSTL_18
• Packaged in WBGA 60 Ball (8X12.5 mm2), using Lead free materials with RoHS compliant

 

Specifications

AttributeAttribute Value
ManufacturerWinbond Electronics
Product CategoryMemory ICs
Series-
PackagingTape & Reel (TR) Alternate Packaging
Package-Case60-TFBGA
Operating-Temperature0°C ~ 85°C (TC)
InterfaceParallel
Voltage-Supply1.7 V ~ 1.9 V
Supplier-Device-Package60-WBGA (8x12.5)
Memory Capacity256M (32M x 8)
Memory-TypeDDR2 SDRAM
Speed2.5ns
Format-MemoryRAM

Descriptions

SDRAM - DDR2 Memory IC 256Mb (32M x 8) Parallel 200MHz 400ps 60-WBGA (8x12.5)
DRAM Chip DDR2 SDRAM 256Mbit 32Mx8 1.8V 60-Pin WBGA
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