AS4C16M32MD1-5BCN IC DRAM 512MBIT PARALLEL 90FBGA Alliance Memory, Inc.
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Detailed Product Description
Product Details
Features• Organization: 1,048,576 words × 4 bits• High speed - 40/50/60/70 ns RAS access time - 20/25/30/35 ns column address access time - 10/13/15/18 ns CAS access time • Low power consumption - Active: 385 mW max (-60) - Standby: 5.5 mW max, CMOS I/O • Fast page mode (AS4C14400) or EDO (AS4C14405) • 1024 refresh cycles, 16 ms refresh interval - RAS-only or CAS-before-RAS refresh • Read-modify-write • TTL-compatible, three-state I/O • JEDEC standard packages - 300 mil, 20/26-pin SOJ - 300 mil, 20/26-pin TSOP • Single 5V power supply • ESD protection ≥ 2001V • Latch-up current ≥ 200 mA
Specifications
DescriptionsSDRAM - Mobile LPDDR Memory IC 512Mb (16M x 32) Parallel 200MHz 5ns
90-FBGA (8x13) DRAM 512M, 1.8V, 200Mhz 16M x 32 Mobile DDR |
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