IS61DDB21M18A-300B4L IC SRAM 18MBIT PARALLEL 165LFBGA ISSI, Integrated Silicon Solution Inc

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Sanhuang electronics (Hong Kong) Co., Limited

City: shenzhen

Country/Region:china

Tel:86-755-88859989

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Miss.Zhao View Contact Details

IS61DDB21M18A-300B4L IC SRAM 18MBIT PARALLEL 165LFBGA ISSI, Integrated Silicon Solution Inc

Brand Name	ISSI, Integrated Silicon Solution Inc
Model Number	IS61DDB21M18A-300B4L
Minimum Order Quantity	1
Price	Based on current price
Payment Terms	T/T
Supply Ability	In stock
Delivery Time	3-5 work days
Packaging Details	anti-static bag & cardboard box
Memory Type	Volatile
Memory Format	SRAM
Technology	SRAM - Synchronous, DDR II
Memory Size	18Mbit
Memory Organization	1M x 18
Memory Interface	Parallel
Clock Frequency	300 MHz
Write Cycle Time - Word, Page	-
Access Time	-
Voltage - Supply	1.71V ~ 1.89V
Operating Temperature	0°C ~ 70°C (TA)
Mounting Type	Surface Mount
Package / Case	165-LBGA
Supplier Device Package	165-LFBGA (13x15)

Detailed Product Description

Product Details

DESCRIPTION

The ISSI IS61C67 is a high speed, low power, 16384-word bgy 1-bit CMOS static RAM. It is fabricated using ISSIs high performance CMOS double metal technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 15ns maximum.

Specifications

Attribute	Attribute Value
Manufacturer	ISSI
Product Category	Memory ICs
Series	-
Packaging	Tray
Package-Case	165-LBGA
Operating-Temperature	0°C ~ 70°C (TA)
Interface	Common I/O
Voltage-Supply	1.71 V ~ 1.89 V
Supplier-Device-Package	165-LFBGA (13x15)
Memory Capacity	18M (1M x 18)
Memory-Type	SRAM - Synchronous, DDR II
Speed	300MHz
Format-Memory	RAM

Descriptions

SRAM - Synchronous, DDR II Memory IC 18Mb (1M x 18) Parallel 300MHz 165-LFBGA (13x15)

SRAM Chip Sync Dual 1.8V 18M-Bit 1M x 18 0.45ns 165-Pin LFBGA

SRAM 18Mb, 1M x 18 DDR-II Sync SRAM

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