S29WS064RABBHW010 IC FLASH 64MBIT PARALLEL 84FBGA Cypress Semiconductor Corp
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Detailed Product Description
Product Details
General DescriptionThe Spansion S29WS256/128/064N are MirrorbitTM Flash products fabricated on 110 nm process technology. These burst mode Flash devices are capable of performing simultaneous read and write operations with zero latency on two separate banks using separate data and address pins. These products can operate up to 80 MHz and use a single VCC of 1.7 V to 1.95 V that makes them ideal for today’s demanding wireless applications requiring higher density, better performance and lowered power consumption.
Distinctive Characteristics■ Single 1.8 V read/program/erase (1.70–1.95 V)■ 110 nm MirrorBit™ Technology ■ Simultaneous Read/Write operation with zero latency ■ 32-word Write Buffer ■ Sixteen-bank architecture consisting of 16/8/4 Mwords for WS256N/128N/064N, respectively ■ Four 16 Kword sectors at both top and bottom of memory array ■ 254/126/62 64 Kword sectors (WS256N/128N/ 064N) ■ Programmable burst read modes — Linear for 32, 16 or 8 words linear read with or without wrap-around — Continuous sequential read mode ■ SecSi™ (Secured Silicon) Sector region consisting of 128 words each for factory and customer ■ 20-year data retention (typical) ■ Cycling Endurance: 100,000 cycles per sector (typical) ■ RDY output indicates data available to system ■ Command set compatible with JEDEC (42.4) standard ■ Hardware (WP#) protection of top and bottom sectors ■ Dual boot sector configuration (top and bottom) ■ Offered Packages — WS064N: 80-ball FBGA (7 mm x 9 mm) — WS256N/128N: 84-ball FBGA (8 mm x 11.6 mm) ■ Low VCC write inhibit ■ Persistent and Password methods of Advanced Sector Protection ■ Write operation status bits indicate program and erase operation completion ■ Suspend and Resume commands for Program and Erase operations ■ Unlock Bypass program command to reduce programming time ■ Synchronous or Asynchronous program operation, independent of burst control register settings ■ ACC input pin to reduce factory programming time ■ Support for Common Flash Interface (CFI) ■ Industrial Temperature range (contact factory)
Specifications
DescriptionsFLASH - NOR Memory IC 64Mb (4M x 16) Parallel 108MHz 80ns 84-FBGA
(11.6x8) NOR Flash Parallel 1.8V 64M-bit 4M x 16 80ns 84-Pin TFBGA Tray Flash Memory |
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