IS41LV16100B-50KL IC DRAM 16MBIT PARALLEL 42SOJ ISSI, Integrated Silicon Solution Inc
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Detailed Product Description
Product Details
DESCRIPTIONTheISSIIS41LV16100B is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word.
FEATURES• TTL compatible inputs and outputs; tristate I/O• Refresh Interval: — Auto refresh Mode: 1,024 cycles /16 ms — RAS-Only, CAS-before-RAS (CBR), and Hidden • JEDEC standard pinout • Single power supply: 3.3V ± 10% • Byte Write and Byte Read operation via two CAS • Industrial Temperature Range: -40oC to +85oC • Lead-free available
Specifications
DescriptionsDRAM - EDO Memory IC 16Mb (1M x 16) Parallel 25ns 42-SOJ |
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