AS7C1024B-12TJCN IC SRAM 1MBIT PARALLEL 32SOJ Alliance Memory, Inc.
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Detailed Product Description
Product Details
Functional descriptionThe AS7C1024B is a high performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) device organized as 131,072 words x 8 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired.Equal address access and cycle times (tAA, tRC, tWC) of 10/12/15/20 ns with output enable access times (tOE) of 5/6/7/8 ns are ideal for high performance applications. Active high and low chip enables (CE1, CE2) permit easy memory expansion with multiple-bank systems.
Features• Industrial and commercial temperatures• Organization: 131,072 words x 8 bits • High speed - 10/12/15/20 ns address access time - 5/6/7/8 ns output enable access time • Low power consumption: ACTIVE - 605 mW / max @ 10 ns • Low power consumption: STANDBY - 55 mW / max CMOS • 6T 0.18u CMOS technology • Easy memory expansion with CE1, CE2, OE inputs • TTL/LVTTL-compatible, three-state I/O • 32-pin JEDEC standard packages - 300 mil SOJ - 400 mil SOJ - 8 × 20mm TSOP 1 - 8 x 13.4mm sTSOP 1 • ESD protection ≥ 2000 volts • Latch-up current ≥ 200 mA
Specifications
Functional compatible componentForm,Package,Functional compatible component
DescriptionsSRAM - Asynchronous Memory IC 1Mb (128K x 8) Parallel 12ns 32-SOJ SRAM 1M, 5V, 12ns FAST 128K x 8 Asynch SRAM |
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