71V424S10YG8 IC SRAM 4MBIT PARALLEL 36SOJ Renesas Electronics America Inc

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Sanhuang electronics (Hong Kong) Co., Limited

City: shenzhen

Country/Region:china

Tel:86-755-88859989

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Miss.Zhao View Contact Details

71V424S10YG8 IC SRAM 4MBIT PARALLEL 36SOJ Renesas Electronics America Inc

Brand Name	Renesas Electronics America Inc
Model Number	71V424S10YG8
Minimum Order Quantity	1
Price	Based on current price
Payment Terms	T/T
Supply Ability	In stock
Delivery Time	3-5 work days
Packaging Details	anti-static bag & cardboard box
Memory Type	Volatile
Memory Format	SRAM
Technology	SRAM - Asynchronous
Memory Size	4Mbit
Memory Organization	512K x 8
Memory Interface	Parallel
Clock Frequency	-
Write Cycle Time - Word, Page	10ns
Access Time	10 ns
Voltage - Supply	3V ~ 3.6V
Operating Temperature	0°C ~ 70°C (TA)
Mounting Type	Surface Mount
Package / Case	36-BSOJ (0.400", 10.16mm Width)
Supplier Device Package	36-SOJ

Detailed Product Description

Product Details

Description

The IDT71V424 is a 4,194,304-bit high-speed Static RAM organized as 512K x 8. It is fabricated using IDT’s high-perfomance, high-reliability CMOS technology. This state-of-the-art technology, combined with innovative circuit design techniques, provides a cost-effective solution for high speed memory needs.

Features

◆512K x 8 advanced high-speed CMOS Static RAM
◆JEDEC Center Power / GND pinout for reduced noise
◆Equal access and cycle times
— Commercial and Industrial: 10/12/15ns
◆Single 3.3V power supply
◆One Chip Select plus one Output Enable pin
◆Bidirectional data inputs and outputs directly TTL-compatible
◆Low power consumption via chip deselect
◆Available in 36-pin, 400 mil plastic SOJ package and 44-pin, 400 mil TSOP.

Specifications

Attribute	Attribute Value
Manufacturer	Integrated Circuit Systems
Product Category	Memory ICs
Series	71V424
Type	Asynchronous
Packaging	Alternate Packaging
Mounting-Style	SMD/SMT
Package-Case	36-BSOJ (0.400", 10.16mm Width)
Operating-Temperature	0°C ~ 70°C (TA)
Interface	Parallel
Voltage-Supply	3 V ~ 3.6 V
Supplier-Device-Package	36-SOJ
Memory Capacity	4M (512K x 8)
Memory-Type	SRAM - Asynchronous
Speed	10ns
Access-Time	10 ns
Format-Memory	RAM
Maximum Operating Temperature	+ 70 C
Operating temperature range	0 C
Interface-Type	Parallel
Organization	512 k x 8
Supply-Current-Max	180 mA
Part-#-Aliases	71V424 IDT71V424S10YG8
Supply-Voltage-Max	3.6 V
Supply-Voltage-Min	3 V
Package-Case	SOJ-36

Functional compatible componentForm,Package,Functional compatible component

Manufacturer Part#	Description	Manufacturer	Compare
K6R4008V1B-JC10 Memory	Standard SRAM, 512KX8, 10ns, CMOS, PDSO36, 0.400 INCH, PLASTIC, SOJ-36	Samsung Semiconductor	71V424S10YG8 vs K6R4008V1B-JC10
71V424L10YGI8 Memory	SOJ-36, Reel	Integrated Device Technology Inc	71V424S10YG8 vs 71V424L10YGI8
AS7C34096A-10JCN Memory	Standard SRAM, 512KX8, 10ns, CMOS, PDSO36, 0.400 INCH, LEAD FREE, SOJ-36	Alliance Memory Inc	71V424S10YG8 vs AS7C34096A-10JCN
71V424S10YGI8 Memory	SOJ-36, Reel	Integrated Device Technology Inc	71V424S10YG8 vs 71V424S10YGI8
IS61LV5128AL-10KLI Memory	Standard SRAM, 512KX8, 10ns, CMOS, PDSO36, 0.400 INCH, LEAD FREE, PLASTIC, MS-027, SOJ-36	Integrated Silicon Solution Inc	71V424S10YG8 vs IS61LV5128AL-10KLI
AS7C34096A-10JIN Memory	Standard SRAM, 512KX8, 10ns, CMOS, PDSO36, 0.400 INCH, LEAD FREE, SOJ-36	Alliance Memory Inc	71V424S10YG8 vs AS7C34096A-10JIN
AS7C34096A-10JI Memory	Standard SRAM, 512KX8, 10ns, CMOS, PDSO36	Alliance Memory Inc	71V424S10YG8 vs AS7C34096A-10JI

Descriptions

SRAM - Asynchronous Memory IC 4Mb (512K x 8) Parallel 10ns 36-SOJ

SRAM 512Kx8 ASYNCHRONOUS 3.3V CMOS SRAM

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71V424S10YG8 IC SRAM 4MBIT PARALLEL 36SOJ Renesas Electronics America Inc

71V424S10YG8 IC SRAM 4MBIT PARALLEL 36SOJ Renesas Electronics America Inc

Product Details

Description

Features

Specifications

Descriptions

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