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Sanhuang electronics (Hong Kong) Co., Limited
Sanhuang Electronics (Hong Kong) Co., Limite
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71V416S12BEI IC SRAM 4MBIT PARALLEL 48CABGA Renesas Electronics America Inc

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Sanhuang electronics (Hong Kong) Co., Limited

City: shenzhen

Country/Region:china

Tel:86-755-88859989

Contact Person:
Miss.Zhao
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71V416S12BEI IC SRAM 4MBIT PARALLEL 48CABGA Renesas Electronics America Inc

Brand Name Renesas Electronics America Inc
Model Number 71V416S12BEI
Minimum Order Quantity 1
Price Based on current price
Payment Terms T/T
Supply Ability In stock
Delivery Time 3-5 work days
Packaging Details anti-static bag & cardboard box
Memory Type Volatile
Memory Format SRAM
Technology SRAM - Asynchronous
Memory Size 4Mbit
Memory Organization 256K x 16
Memory Interface Parallel
Clock Frequency -
Write Cycle Time - Word, Page 12ns
Access Time 12 ns
Voltage - Supply 3V ~ 3.6V
Operating Temperature -40°C ~ 85°C (TA)
Mounting Type Surface Mount
Package / Case 48-TFBGA
Supplier Device Package 48-CABGA (9x9)
Detailed Product Description

Product Details

 

Description

The IDT71V416 is a 4,194,304-bit high-speed Static RAM organized as 256K x 16. It is fabricated using high-perfomance, high-reliability CMOS technology. This state-of-the-art technology, combined with innovative circuit design techniques, provides a cost-effective solution for high-speed memory needs.
The IDT71V416 has an output enable pin which operates as fast as 5ns, with address access times as fast as 10ns. All bidirectional inputs and outputs of the IDT71V416 are LVTTL-compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation.

 

 

Features

◆ 256K x 16 advanced high-speed CMOS Static RAM
◆ JEDEC Center Power / GND pinout for reduced noise.
◆ Equal access and cycle times
– Commercial and Industrial: 10/12/15ns
◆ One Chip Select plus one Output Enable pin
◆ Bidirectional data inputs and outputs directly LVTTL-compatible
◆ Low power consumption via chip deselect
◆ Upper and Lower Byte Enable Pins
◆ Single 3.3V power supply
◆ Available in 44-pin, 400 mil plastic SOJ package and a 44-pin, 400 mil TSOP Type II package and a 48 ball grid array, 9mm x 9mm package.

 

 

Specifications

AttributeAttribute Value
ManufacturerIntegrated Circuit Systems
Product CategoryMemory ICs
Series71V416
TypeAsynchronous
PackagingTray Alternate Packaging
Mounting-StyleSMD/SMT
Package-Case48-TFBGA
Operating-Temperature-40°C ~ 85°C (TA)
InterfaceParallel
Voltage-Supply3 V ~ 3.6 V
Supplier-Device-Package48-CABGA (9x9)
Memory Capacity4M (256K x 16)
Memory-TypeSRAM - Asynchronous
Speed12ns
Access-Time12 ns
Format-MemoryRAM
Maximum Operating Temperature+ 85 C
Operating temperature range- 40 C
Interface-TypeParallel
Organization256 k x 16
Supply-Current-Max180 mA
Part-#-Aliases71V416 IDT71V416S12BEI
Supply-Voltage-Max3.6 V
Supply-Voltage-Min3 V
Package-CaseCABGA-48
Functional compatible componentForm,Package,Functional compatible component
Manufacturer Part#DescriptionManufacturerCompare
IDT71V416S12BEI8
Memory
Standard SRAM, 256KX16, 12ns, CMOS, PBGA48, 9 X 9 MM, BGA-48Integrated Device Technology Inc71V416S12BEI vs IDT71V416S12BEI8
IDT71V416YS12BEG3
Memory
Standard SRAM, 256KX16, 12ns, CMOS, PBGA48, 9 X 9 MM, ROHS COMPLIANT, BGA-48Integrated Device Technology Inc71V416S12BEI vs IDT71V416YS12BEG3
IDT71V416S12BEI
Memory
Standard SRAM, 256KX16, 12ns, CMOS, PBGA48, 9 X 9 MM, BGA-48Integrated Device Technology Inc71V416S12BEI vs IDT71V416S12BEI
IDT71V416VS12BEGI
Memory
Standard SRAM, 256KX16, 12ns, CMOS, PBGA48, 9 X 9 MM, BGA-48Integrated Device Technology Inc71V416S12BEI vs IDT71V416VS12BEGI
IDT71V416YS12BEGI
Memory
Standard SRAM, 256KX16, 12ns, CMOS, PBGA48, 9 X 9 MM, BGA-48Integrated Device Technology Inc71V416S12BEI vs IDT71V416YS12BEGI
IDT71V416YFS12BEI
Memory
Standard SRAM, 256KX16, 12ns, CMOS, PBGA48, 9 X 9 MM, POWER, BGA-48Integrated Device Technology Inc71V416S12BEI vs IDT71V416YFS12BEI
71V416VS12BEGI
Memory
Standard SRAM, 256KX16, 12ns, CMOS, PBGA48, 9 X 9 MM, ROHS COMPLIANT, BGA-48Integrated Device Technology Inc71V416S12BEI vs 71V416VS12BEGI
71V416S12BEI8
Memory
CABGA-48, ReelIntegrated Device Technology Inc71V416S12BEI vs 71V416S12BEI8
IDT71V416S12BEGI
Memory
Standard SRAM, 256KX16, 12ns, CMOS, PBGA48, 9 X 9 MM, BGA-48Integrated Device Technology Inc71V416S12BEI vs IDT71V416S12BEGI
71V416S12BEGI
Memory
Standard SRAM, 256KX16, 12ns, CMOS, PBGA48, 9 X 9 MM, ROHS COMPLIANT, BGA-48Integrated Device Technology Inc71V416S12BEI vs 71V416S12BEGI

Descriptions

SRAM - Asynchronous Memory IC 4Mb (256K x 16) Parallel 12ns 48-CABGA (9x9)
SRAM 256Kx16 ASYNCHRONOUS 3.3V CMOS SRAM
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