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Sanhuang electronics (Hong Kong) Co., Limited
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W29N01HVSINA IC FLASH 1GBIT PARALLEL 48TSOP Winbond Electronics

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Sanhuang electronics (Hong Kong) Co., Limited

City: shenzhen

Country/Region:china

Tel:86-755-88859989

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Miss.Zhao
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W29N01HVSINA IC FLASH 1GBIT PARALLEL 48TSOP Winbond Electronics

Brand Name Winbond Electronics
Model Number W29N01HVSINA
Minimum Order Quantity 1
Price Based on current price
Payment Terms T/T
Supply Ability In stock
Delivery Time 3-5 work days
Packaging Details anti-static bag & cardboard box
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NAND (SLC)
Memory Size 1Gbit
Memory Organization 128M x 8
Memory Interface Parallel
Clock Frequency -
Write Cycle Time - Word, Page 25ns
Access Time 25 ns
Voltage - Supply 2.7V ~ 3.6V
Operating Temperature -40°C ~ 85°C (TA)
Mounting Type Surface Mount
Package / Case 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package 48-TSOP
Detailed Product Description

Product Details

 

GENERAL DESCRIPTION

The W29C040 is a 4-megabit, 5-volt only CMOS page mode Flash Memory organized as 512K ´8 bits. The device can be written (erased and programmed) in-system with a standard 5V power supply. A 12-volt VPPis not required. The unique cell architecture of the W29C040 results in fast write (erase/program) operations with extremely low current consumption (compared to other comparable 5-volt flash memory products.) The device can also be erased and programmed by using standard EPROM programmers.

 

 

FEATURES

· Single 5-volt write (erase and program) operations
· Fast page-write operations
- 256 bytes per page
- Page write (erase/program) cycle: 5 mS (typ.)
- Effective byte-write (erase/program) cycle time: 19.5 mS
- Optional software-protected data write
· Fast chip-erase operation: 50 mS
· Two 16 KB boot blocks with lockout
· Page write (erase/program) cycles: 50K (typ.)
· Read access time: 70/90/120 nS
· Ten-year data retention
· Software and hardware data protection
· Low power consumption
- Active current: 25 mA (typ.)
- Standby current: 20 mA (typ.)
·Automaticwrite (erase/program) timing with internal VPP generation
· End of write (erase/program) detection
- Toggle bit
- Data polling
· Latched address and data
· All inputs and outputs directly TTL compatible
· JEDEC standard byte-wide pinouts
· Available packages: 32-pin 600 mil DIP, TSOP and PLCC

 

Specifications

AttributeAttribute Value
ManufacturerWinbond Electronics
Product CategoryMemory ICs
Series-
PackagingTray
Package-Case48-TFSOP (0.488", 12.40mm Width)
Operating-Temperature-40°C ~ 85°C (TA)
InterfaceParallel
Voltage-Supply2.7 V ~ 3.6 V
Supplier-Device-Package48-TSOP (18.4x12)
Memory Capacity1G (128M x 8)
Memory-TypeFLASH - NAND (SLC)
Speed25ns
Format-MemoryFLASH

Descriptions

FLASH - NAND (SLC) Memory IC 1Gb (128M x 8) Parallel 25ns 48-TSOP (18.4x12)
NAND Flash 3V/3.3V 1G-bit 128M x 8 48-Pin TSOP-I
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