W29N01HVSINA IC FLASH 1GBIT PARALLEL 48TSOP Winbond Electronics
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Detailed Product Description
Product Details
GENERAL DESCRIPTIONThe W29C040 is a 4-megabit, 5-volt only CMOS page mode Flash Memory organized as 512K ´8 bits. The device can be written (erased and programmed) in-system with a standard 5V power supply. A 12-volt VPPis not required. The unique cell architecture of the W29C040 results in fast write (erase/program) operations with extremely low current consumption (compared to other comparable 5-volt flash memory products.) The device can also be erased and programmed by using standard EPROM programmers.
FEATURES· Single 5-volt write (erase and program) operations· Fast page-write operations - 256 bytes per page - Page write (erase/program) cycle: 5 mS (typ.) - Effective byte-write (erase/program) cycle time: 19.5 mS - Optional software-protected data write · Fast chip-erase operation: 50 mS · Two 16 KB boot blocks with lockout · Page write (erase/program) cycles: 50K (typ.) · Read access time: 70/90/120 nS · Ten-year data retention · Software and hardware data protection · Low power consumption - Active current: 25 mA (typ.) - Standby current: 20 mA (typ.) ·Automaticwrite (erase/program) timing with internal VPP generation · End of write (erase/program) detection - Toggle bit - Data polling · Latched address and data · All inputs and outputs directly TTL compatible · JEDEC standard byte-wide pinouts · Available packages: 32-pin 600 mil DIP, TSOP and PLCC
Specifications
DescriptionsFLASH - NAND (SLC) Memory IC 1Gb (128M x 8) Parallel 25ns 48-TSOP
(18.4x12) NAND Flash 3V/3.3V 1G-bit 128M x 8 48-Pin TSOP-I |
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