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AT25DF041B-MAHN-T IC FLASH 4MBIT SPI 104MHZ 8UDFN Renesas Design Germany GmbH

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Sanhuang electronics (Hong Kong) Co., Limited

City: shenzhen

Country/Region:china

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AT25DF041B-MAHN-T IC FLASH 4MBIT SPI 104MHZ 8UDFN Renesas Design Germany GmbH

Brand Name Renesas Design Germany GmbH
Model Number AT25DF041B-MAHN-T
Minimum Order Quantity 1
Price Based on current price
Payment Terms T/T
Supply Ability In stock
Delivery Time 3-5 work days
Packaging Details anti-static bag & cardboard box
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH
Memory Size 4Mbit
Memory Organization 512K x 8
Memory Interface SPI
Clock Frequency 104 MHz
Write Cycle Time - Word, Page 8µs, 2.5ms
Access Time -
Voltage - Supply 1.65V ~ 3.6V
Operating Temperature -40°C ~ 85°C (TC)
Mounting Type Surface Mount
Package / Case 8-UFDFN Exposed Pad
Supplier Device Package 8-UDFN (2x3)
Detailed Product Description

Product Details

 

Description

The AT25DF041A is a serial interface Flash memory device designed for use in a wide variety of high-volume consumer-based applications in which program code is shadowed from Flash memory into embedded or external RAM for execution. The flexible erase architecture of the AT25DF041A, with its erase granularity as small as 4 Kbytes, makes it ideal for data storage as well, eliminating the need for additional data storage EEPROM devices.

 

 

Features

• Single 2.7V - 3.6V Supply
• Serial Peripheral Interface (SPI) Compatible
– Supports SPI Modes 0 and 3
• 70 MHz Maximum Clock Frequency
• Flexible, Uniform Erase Architecture
– 4-Kbyte Blocks
– 32-Kbyte Blocks
– 64-Kbyte Blocks
– Full Chip Erase
• Individual Sector Protection withGlobal Protect/Unprotect Feature
– One 16-Kbyte Top Boot Sector
– Two 8-Kbyte Sectors
– One 32-Kbyte Sector
– Seven 64-Kbyte Sectors
• Hardware Controlled Locking of Protected Sectors
• Flexible Programming Options
– Byte/Page Program (1 to 256 Bytes)
– Sequential Program Mode Capability
• Automatic Checking and Reporting of Erase/Program Failures
• JEDEC Standard Manufacturer and Device ID Read Methodology
• Low Power Dissipation
– 5 mA Active Read Current (Typical)
– 10 µA Deep Power-down Current (Typical)
• Endurance: 100,000 Program/Erase Cycles
• Data Retention: 20 Years
• Complies with Full Industrial Temperature Range
• Industry Standard Green (Pb/Halide-free/RoHS Compliant) Package Options
– 8-lead SOIC (150-miland 200-mil wide)
– 8-contact MLF (5 x 6 mm)

 

Specifications

AttributeAttribute Value
ManufacturerAdesto Technologies
Product CategoryMemory ICs
ManufacturerAdesto Technologies
Product-CategoryFlash Memory
RoHSDetails
BrandAdesto Technologies

Descriptions

FLASH Memory IC 4Mb (512K x 8) SPI 104MHz 8-UDFN (2x3)
Flash Serial-SPI 1.8V/2.5V/3.3V 4M-bit 8-bit 7.5ns T/R
Flash Memory 8-UDFN (2x3x0.6), IND TEMP, 1.65V, T&R
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