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DS1225AD-200+ IC NVSRAM 64KBIT PARALLEL 28EDIP Analog Devices Inc./Maxim Integrated

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Sanhuang electronics (Hong Kong) Co., Limited

City: shenzhen

Country/Region:china

Tel:86-755-88859989

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DS1225AD-200+ IC NVSRAM 64KBIT PARALLEL 28EDIP Analog Devices Inc./Maxim Integrated

Brand Name Analog Devices Inc./Maxim Integrated
Model Number DS1225AD-200+
Minimum Order Quantity 1
Price Based on current price
Payment Terms T/T
Supply Ability In stock
Delivery Time 3-5 work days
Packaging Details anti-static bag & cardboard box
Memory Type Non-Volatile
Memory Format NVSRAM
Technology NVSRAM (Non-Volatile SRAM)
Memory Size 64Kbit
Memory Organization 8K x 8
Memory Interface Parallel
Clock Frequency -
Write Cycle Time - Word, Page 200ns
Access Time 200 ns
Voltage - Supply 4.5V ~ 5.5V
Operating Temperature 0°C ~ 70°C (TA)
Mounting Type Through Hole
Package / Case 28-DIP Module (0.600", 15.24mm)
Supplier Device Package 28-EDIP
Detailed Product Description

Product Details

 

DESCRIPTION

The DS1225AB and DS1225AD are 65,536-bit, fully static, nonvolatile SRAMs organized as 8192 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCCfor an out-of-tolerance condition.

 

 

FEATURES

10 years minimum data retention in the absence of external power
Data is automatically protected during power loss
Directly replaces 8k x 8 volatile static RAM or EEPROM
Unlimited write cycles
Low-power CMOS
JEDEC standard 28-pin DIP package
Read and write access times as fast as 70 ns
Lithium energy source is electrically disconnected to retain freshness until power is applied for the first time
Full ±10% VCCoperating range (DS1225AD)
Optional ±5% VCC operating range (DS1225AB)
Optional industrial temperature range of -40°C to +85°C, designated IND

 

 

Specifications

AttributeAttribute Value
ManufacturerMaxim Integrated
Product CategoryMemory ICs
SeriesDS1225AD
PackagingTube
Mounting-StyleThrough Hole
Package-Case28-DIP Module (0.600", 15.24mm)
Operating-Temperature0°C ~ 70°C (TA)
InterfaceParallel
Voltage-Supply4.5 V ~ 5.5 V
Supplier-Device-Package28-EDIP
Memory Capacity64K (8K x 8)
Memory-TypeNVSRAM (Non-Volatile SRAM)
Speed200ns
Access-Time200 ns
Format-MemoryRAM
Maximum Operating Temperature+ 70 C
Operating temperature range0 C
Operating-Supply-Current75 mA
Interface-TypeParallel
Organization8 k x 8
Part-#-Aliases90-1225A+D00 DS1225AD
Data-Bus-Width8 bit
Supply-Voltage-Max5.5 V
Supply-Voltage-Min4.5 V
Package-CaseEDIP-28

Functional compatible component

Form,Package,Functional compatible component

 

Manufacturer Part#DescriptionManufacturerCompare
DS1225Y-200+
Memory
Non-Volatile SRAM Module, 8KX8, 200ns, CMOS, 0.720 INCH, ROHS COMPLIANT, DIP-28Maxim Integrated ProductsDS1225AD-200+ vs DS1225Y-200+
DS1225AB-200IND
Memory
8KX8 NON-VOLATILE SRAM MODULE, 200ns, PDMA28, 0.720 INCH, DIP-28Rochester Electronics LLCDS1225AD-200+ vs DS1225AB-200IND
DS1225Y-200
Memory
Non-Volatile SRAM Module, 8KX8, 200ns, CMOS, 0.720 INCH, DIP-28Maxim Integrated ProductsDS1225AD-200+ vs DS1225Y-200
DS1225AD-200
Memory
Non-Volatile SRAM Module, 8KX8, 200ns, CMOS, PDIP28, 0.720 INCH, EXTENDED, DIP-28Dallas SemiconductorDS1225AD-200+ vs DS1225AD-200
DS1225AB-200IND+
Memory
Non-Volatile SRAM Module, 8KX8, 200ns, CMOS, PDMA28, 0.720 INCH, ROHS COMPLIANT, DIP-28Maxim Integrated ProductsDS1225AD-200+ vs DS1225AB-200IND+
BQ4010MA-200
Memory
8KX8 NON-VOLATILE SRAM MODULE, 200ns, DMA28, DIP-28Texas InstrumentsDS1225AD-200+ vs BQ4010MA-200
BQ4010YMA-200
Memory
8KX8 NON-VOLATILE SRAM MODULE, 200ns, PDIP28Texas InstrumentsDS1225AD-200+ vs BQ4010YMA-200
DS1225AB-200
Memory
8KX8 NON-VOLATILE SRAM MODULE, 200ns, PDMA28, 0.720 INCH, DIP-28Rochester Electronics LLCDS1225AD-200+ vs DS1225AB-200
DS1225AB-200+
Memory
Non-Volatile SRAM Module, 8KX8, 200ns, CMOS, PDMA28, 0.720 INCH, ROHS COMPLIANT, DIP-28Maxim Integrated ProductsDS1225AD-200+ vs DS1225AB-200+
DS1225AD-200IND+
Memory
Non-Volatile SRAM Module, 8KX8, 200ns, CMOS, PDMA28, 0.720 INCH, ROHS COMPLIANT, DIP-28Maxim Integrated ProductsDS1225AD-200+ vs DS1225AD-200IND+

Descriptions

NVSRAM (Non-Volatile SRAM) Memory IC 64Kb (8K x 8) Parallel 200ns 28-EDIP
NVRAM 64k Nonvolatile SRAM
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