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AT25DF021A-XMHN-T IC FLASH 2MBIT SPI 104MHZ 8TSSOP Renesas Design Germany GmbH

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Sanhuang electronics (Hong Kong) Co., Limited

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Country/Region:china

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AT25DF021A-XMHN-T IC FLASH 2MBIT SPI 104MHZ 8TSSOP Renesas Design Germany GmbH

Brand Name Renesas Design Germany GmbH
Model Number AT25DF021A-XMHN-T
Minimum Order Quantity 1
Price Based on current price
Payment Terms T/T
Supply Ability In stock
Delivery Time 3-5 work days
Packaging Details anti-static bag & cardboard box
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH
Memory Size 2Mbit
Memory Organization 256K x 8
Memory Interface SPI
Clock Frequency 104 MHz
Write Cycle Time - Word, Page 8µs, 2.5ms
Access Time -
Voltage - Supply 1.65V ~ 3.6V
Operating Temperature -40°C ~ 85°C (TC)
Mounting Type Surface Mount
Package / Case 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package 8-TSSOP
Detailed Product Description

Product Details

 

Description

The AT25DF021 is a serial interface Flash memory device designed for use in a wide variety of high-volume consumer based applications in which program code is shad owed from Flash memory into embedded or external RAM for execution. The flexible erase architecture of the AT25DF021, with its erase granularity as small as 4 Kbytes, makes it ideal for data storage as well, eliminating the need for additional data storage
EEPROM devices.

 

 

Features

• Single 2.3V - 3.6V or 2.7V - 3.6V Supply
• Serial Peripheral Interface (SPI) Compatible
– Supports SPI Modes 0 and 3
• 66 MHz Maximum Operating Frequency
– Clock-to-Output (tV) of 6 ns Maximum
• Flexible, Optimized Erase Architecture for Code + Data Storage Applications
– Uniform 4-Kbyte Block Erase
– Uniform 32-Kbyte Block Erase
– Uniform 64-Kbyte Block Erase
– Full Chip Erase
• Individual Sector Protection with Global Protect/Unprotect Feature
– Four Sectors of 64 Kbytes Each
• Hardware Controlled Locking of Protected Sectors via WP Pin
• 128-Byte Programmable OTP Security Register
• Flexible Programming
– Byte/Page Program (1 to 256 Bytes)
• Fast Program and Erase Times
– 1.0 ms Typical Page Program (256 Bytes) Time
– 50 ms Typical 4-Kbyte Block Erase Time
– 250 ms Typical 32-Kbyte Block Erase Time
– 450 ms Typical 64-Kbyte Block Erase Time
• Automatic Checking and Reporting of Erase/Program Failures
• JEDEC Standard Manufacturer and Device ID Read Methodology
• Low Power Dissipation
– 7 mA Active Read Current (Typical at 20 MHz)
– 15 µA Deep Power-Down Current (Typical)
• Endurance: 100,000 Program/Erase Cycles
• Data Retention: 20 Years
• Complies with Full Industrial Temperature Range
• Industry Standard Green (Pb/Halide-free/RoHS Compliant) Package Options
– 8-lead SOIC (150-mil Wide)
– 8-pad Ultra Thin DFN (5 x 6 x 0.6 mm)

 

Specifications

AttributeAttribute Value
ManufacturerAdesto Technologies
Product CategoryMemory ICs
Series-
PackagingAlternate Packaging
Package-Case8-TSSOP (0.173", 4.40mm Width)
Operating-Temperature-40°C ~ 85°C (TC)
InterfaceSPI Serial
Voltage-Supply1.65 V ~ 3.6 V
Supplier-Device-Package8-TSSOP
Memory Capacity2M (256K x 8)
Memory-TypeFLASH
Speed104MHz
Format-MemoryFLASH

Descriptions

FLASH Memory IC 2Mb (256K x 8) SPI 104MHz 8-TSSOP
2-Mbit, 1.65V Minimum SPI Serial Flash Memory with Dual-I/O Support
Flash Memory 8-TSSOP, IND TEMP, 1.65V, T&R
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