CY7C2663KV18-450BZI IC SRAM 144MBIT PAR 165FBGA Infineon Technologies
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Detailed Product Description
Product Details
Functional DescriptionThe CY7C266 is a high-performance 8192-word by 8-bit CMOS PROM. When deselected, the CY7C266 automatically powers down into a low-power standby mode. It is packaged in a 600-mil-wide package. The reprogrammable packages are equipped with an erasure window; when exposed to UV light, these PROMs are erased and can then be reprogrammed. The memory cells utilize proven EPROM floating-gate technology and byte-wide intelligent programming algorithms.
Features• CMOS for optimum speed/power• Windowed for reprogrammability • High speed — 20 ns (Commercial) • Low power — 660 mW (Commercial) • Super low standby power — Less than 85 mW when deselected • EPROM technology 100% programmable • 5V ±10% VCC, commercial and military • TTL-compatible I/O • Direct replacement for 27C64 EPROMs
Specifications
DescriptionsSRAM - Synchronous, QDR II+ Memory IC 144Mb (8M x 18) Parallel
450MHz 165-FBGA (15x17) SRAM Chip Sync Dual 1.8V 144M-Bit 8M x 18 0.45ns 165-Pin FBGA Tray SRAM 144Mb 1.8V 450Mhz 8M x 18 QDR II SRAM |
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