NCV20062DR2G onsemi

Here is a suggested product introduction for the ON Semiconductor NCV20062DR2G Power MOSFET:

NCV20062DR2G

The NCV20062DR2G delivers industry-leading RDS(on) density in ON Semiconductor's compact DFN PowerSSO6 package. As a 60A N-channel MOSFET optimized for demanding current applications with strict thermal constraints, it maximizes heat dissipation in minimal footprint.

Key Features:

• 60V power rating
• 60A continuous drain current capability
• 12mΩ typical RDS(on)
• Thermally enhanced DFN PowerSSO6 package
• Very low 1.7°C/W junction-to-case thermal resistance
• -55°C to 175°C extended operating temperature
• Optimized low gate charge for high frequency operation
• Ideal for motor control, DC/DC conversion and server power supplies

PowerSSO6's thermal vias deliver best-in-class heat dissipation in minimal size.

Combines top-tier RDS(on) density with industry-leading thermal performance.

Ensures reliable operation under demanding environmental conditions.

Low gate charge maximizes switching frequencies within strict thermal guidelines.

Simply enables the highest current density solution for applications with heat challenges.

On Semiconductor's thermal optimization leader for power systems requiring maximum capability within strict cooling constraints.

Ideal choice where board space is extremely tight yet thermal management demands are high.