NCS20062DTBR2G onsemi

Here is a potential introduction for the ON Semiconductor NCS20062DTBR2G dual 60A N-Channel MOSFET:

NCS20062DTBR2G

The NCS20062DTBR2G is a high-power dual N-channel MOSFET solution from ON Semiconductor capable of reliably switching up to 60A per channel. Available in the rugged and widely used TO-247-3 package, it provides an industry-proven solution for controlling substantial load currents across two independent channels.

Key Features:

• 80V maximum drain-source voltage rating per channel
• 60A continuous drain current per channel
• 0.29Ω typical RDS(on) per channel
• Dual industry-standard TO-247-3 package
• Extended -55°C to 175°C temperature rating
• Integrated protections for reliable dual switching

Enables robust dual 60A switching in an automotive/industrial package.

Independent channels maximize design flexibility and efficiency.

Ultra low resistance supports high efficiency at significant load currents.

Rugged package withstands harsh vibration and thermal conditions.

Wide operating temperature range meets most demanding requirements.

Ideal for applications requiring dual 60A load control such as motor drives.

Integrated protections simplify design while ensuring robust performance.

Highest performance dual channel MOSFET solution for severe environments.