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BSM25GD120DN2

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Shenzhen Wonder-Chip Electronics Company Limited

City: shenzhen

Country/Region:china

Tel:86-0755-82771348

Contact Person:
Mrs.Bowe View Contact Details

BSM25GD120DN2

Gate-Emitter Leakage Current :	180 nA
Product Category :	IGBT Modules
Continuous Collector Current at 25 C :	35 A
Pd - Power Dissipation :	200 W
Collector- Emitter Voltage VCEO Max :	1200 V
Package / Case :	EconoPACK 2A
Maximum Operating Temperature :	+ 150 C
Configuration :	Hex
Collector-Emitter Saturation Voltage :	2.5 V
Product :	IGBT Silicon Modules
Manufacturer :	Infineon Technologies
Description	IGBT Modules 1200V 25A FL BRIDGE
Stock	In Stock

Detailed Product Description

The BSM25GD120DN2,from Infineon Technologies,is IGBT Modules.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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