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FD150R12RT4

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Shenzhen Wonder-Chip Electronics Company Limited

City: shenzhen

Country/Region:china

Tel:86-0755-82771348

Contact Person:
Mrs.Bowe View Contact Details

FD150R12RT4

Gate-Emitter Leakage Current :	100 nA
Product Category :	IGBT Modules
Continuous Collector Current at 25 C :	150 A
Collector- Emitter Voltage VCEO Max :	1200 V
Pd - Power Dissipation :	790 W
Maximum Operating Temperature :	+ 150 C
Collector-Emitter Saturation Voltage :	2.15 V
Manufacturer :	Infineon Technologies
Description	IGBT Modules IGBT 1200V 150A
Stock	In Stock

Detailed Product Description

The FD150R12RT4,from Infineon Technologies,is IGBT Modules.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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