IXFN38N100Q2 Discrete Semiconductor Modules 38 Amps 1000V 0.25 Rds

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Wisdtech Technology Co.,Limited

City: shenzhen

Province/State:guangdong

Country/Region:china

Tel:86-0755-23606019

Contact Person:
Mrs.Tao View Contact Details

Brand Name	IXYS
Model Number	IXFN38N100Q2
Place of Origin	USA
Minimum Order Quantity	1pcs
Price	Email us for details
Payment Terms	T/T, Western Union
Supply Ability	1500pcs
Delivery Time	1day
Packaging Details	Tube
Description	IXFN38N100Q2 Discrete Semiconductor Modules 38 Amps 1000V 0.25 Rds
Stock	100PCS
Date Code	Newest code
Shipping by	DHL/UPS/Fedex
Condition	New*Original
Warranty	365days
Lead free	Rohs Compliant
Lead times	Immediately Shipment

Detailed Product Description

IXFN38N100Q2 Discrete Semiconductor Modules 38 Amps 1000V 0.25 Rds

Manufacturer:	IXYS
Product Category:	Discrete Semiconductor Modules
RoHS:	Details
Product:	Power MOSFET Modules
Technology:	Si
Vgs - Gate-Source Voltage:	- 30 V, + 30 V
Mounting Style:	Chassis Mount
Package / Case:	SOT-227-4
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Series:	IXFN38N100
Packaging:	Tube
Brand:	IXYS
Configuration:	Single
Fall Time:	15 ns
Height:	9.6 mm
Id - Continuous Drain Current:	38 A
Length:	38.23 mm
Number of Channels:	1 Channel
Pd - Power Dissipation:	890 W
Product Type:	Discrete Semiconductor Modules
Rds On - Drain-Source Resistance:	250 mOhms
Rise Time:	28 ns
Subcategory:	Discrete Semiconductor Modules
Tradename:	HiPerFET
Transistor Polarity:	N-Channel
Typical Turn-Off Delay Time:	57 ns
Typical Turn-On Delay Time:	25 ns
Vds - Drain-Source Breakdown Voltage:	1 kV
Width:	25.42 mm
Unit Weight:	1.058219 oz

Wisdtech Technology Co.,Limited
Tel: +86-755-23606019
Address: Room 1205-1207,Nanguang building,Huafu Road,

Futian District,Shenzhen,Guangdong,China

Laneya
Telephone:+86-13420902155
E-mail:sales@wisdtech.com.cn
Wechat:laneyatao66
WhatsApp:+8613420902155
Skype:sales@wisdtech.com.cn

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