FQA11N90C MOSFET 900V N-Ch Q-FET advance C-Series

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Wisdtech Technology Co.,Limited

City: shenzhen

Province/State:guangdong

Country/Region:china

Tel:86-0755-23606019

Contact Person:
Mrs.Tao View Contact Details

Detailed Product Description

Product Attribute	Attribute Value
Manufacturer:	onsemi
Product Category:	MOSFET
RoHS:	Details
Technology:	Si
Mounting Style:	Through Hole
Package / Case:	TO-3PN-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	900 V
Id - Continuous Drain Current:	11 A
Rds On - Drain-Source Resistance:	1.4 Ohms
Vgs - Gate-Source Voltage:	- 30 V, + 30 V
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	300 W
Channel Mode:	Enhancement
Packaging:	Tube
Brand:	onsemi / Fairchild
Configuration:	Single
Fall Time:	85 ns
Forward Transconductance - Min:	9 S
Height:	20.1 mm
Length:	16.2 mm
Product Type:	MOSFET
Rise Time:	130 ns
Factory Pack Quantity:	30
Subcategory:	MOSFETs
Transistor Type:	1 N-Channel
Type:	MOSFET
Typical Turn-Off Delay Time:	130 ns
Typical Turn-On Delay Time:	60 ns
Width:	5 mm
Part # Aliases:	FQA11N90C_NL
Unit Weight:	0.162260 oz

Product Tags: FQA11N90C MOSFET 900V FQA11N90C MOSFET

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