DXTP07025BFG-7 Bipolar Junction Transistor Pwr Mid Perf Transistor Single Configuration

Bipolar transistor-dual manufacturer: Diodes Incorporated
Product category: bipolar transistor-bipolar junction transistor (BJT)
Technology: si
Installation style: SMD/SMT
Package/box: powerdi3333-8
Transistor polarity: PNP
Configuration: Single
Maximum DC collector current: 3 A
Maximum collector-emitter voltage VCEO: 25 V.
Collector-base voltage VCBO: 35 V
Emitter-base voltage VEBO: 7 V
Collector-emitter saturation voltage: 164 mV
Pd- power dissipation: 3.1w
Gain bandwidth product fT: 160 MHz
Minimum operating temperature:-55 C.
Maximum operating temperature:+175 C.
Package: Reel
Package: cuttape
Encapsulation: MouseReel
Trademark: Diodes Incorporated
Collector continuous current: - 3 A
Dc collector/basegain hfemin: 100
Maximum DC current gain hFE: 300
Product type: BJTs-Bipolar Transistors
Subcategory: Transistors
Unit weight: 30 mg BJT