DXT5401-13 Bipolar Junction Transistor 1W 150V Small Robust Design

Manufacturer: Diodes Incorporated
Product category: bipolar transistor-bipolar junction transistor (BJT)
Technology: si
Installation style: SMD/SMT
Package/box: SOT-89-3
Transistor polarity: PNP
Configuration: Single
Maximum DC collector current: 600 mA
Maximum collector-emitter voltage VCEO: 150 V.
Collector-base voltage vcbo: 160 v.
Emitter-base voltage VEBO: 5 V
Collector-emitter saturation voltage: 500 mV
Pd- power dissipation: 1 W
Gain bandwidth product ft: 300mhz
Minimum operating temperature:-55 C.
Maximum operating temperature:+150 C.
Series: DXT5401
Package: Reel
Package: cuttape
Encapsulation: MouseReel
Trademark: Diodes Incorporated
Dc collector/basegain hfemin: 50 at-50 ma,-5 v.
Height: 1.6 mm
Length: 4.6 mm
Product type: BJTs-Bipolar Transistors
Subcategory: Transistors
Width: 2.6 mm
Unit weight: 52 mg