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multi function gate bipolar transistor
Selling leads150V NPN Low Saturation Transistor Diodes FMMT625TA Suitable for DC DC Power Modules and Motor Drive
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Diodes Incorporated FMMT625 150V NPN Silicon Low Saturation Transistor The Diodes Incorporated FMMT625 is a 150V NPN silicon low saturation transistor ...
2026-02-14 04:30:16
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Product Overview The LMBTA55 and LMBTA56 are PNP silicon driver transistors in a SOT-23 (TO-236AB) package. These transistors are designed for general...
2026-02-14 04:28:24
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SOT23 Package DIODES ZXTP25100BFHTA 100V PNP Transistor Ideal for Motor and Relay Drive Applications
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Product Overview The ZXTP25100BFH is a 100V PNP medium power transistor in a SOT23 package. It offers high peak current capability, low VCE(SAT), and ...
2026-02-14 04:30:23
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Low Saturation Voltage PNP Transistor DIODES ZXTP2012ZTA in SOT89 Package for Motor and Gate Driving
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Product Overview The ZXTP2012Z is a 60V PNP low saturation transistor in a SOT89 package, offering high continuous current capability of up to -4.3A ...
2026-02-14 04:30:22
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Product Overview The ZXTN25012EFL is a 12V, SOT23, NPN low power transistor designed with advanced process capability for high current gain hold-up. ...
2026-02-14 04:30:21
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WeEn BT148-400R 127 SCR planar passivated sensitive gate SIP3 package for phase control applications
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Product Overview The BT148-400R is a planar passivated SCR with a sensitive gate, housed in a SIP3 (SOT82) plastic package. It is designed for general...
2026-02-13 10:17:48
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650V 50A IGBT RGTH00TS65GC11 HXY MOSFET with Low EMI Low Gate Charge and Easy Paralleling Capability
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...positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. This device is suitable for applications such as ...
2026-02-13 10:33:21
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Powerful HXY MOSFET FGHL50T65SQ-HXY 650V 50A IGBT with Easy Paralleling and Low Gate Charge Features
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... temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. This device is suitable for use in UPS, EV-Chargers, and ...
2026-02-13 10:33:15
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High current IGBT HXY MOSFET RGS80TS65HRC11-HXY with low gate charge and easy paralleling capability
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... coefficient in Vcesat, low EMI, low gate charge, and low saturation voltage. With a maximum junction temperature of 175C, this device is suitable ...
2026-02-13 10:33:10
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...Gate Bipolar Transistor (IGBT) designed for ignition systems, particularly in Coil-on-Plug and Driver-on-Coil applications. It features monolithic ...
2026-02-13 10:32:03
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