231 - 240 of 278
multi function gate bipolar transistor
Selling leads
|
... temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. Key features include a maximum junction temperature of ...
2026-02-13 10:32:42
|
|
...coefficient in Vcesat, low EMI, low gate charge, and low saturation voltage. With a maximum junction temperature of 175C, this device is suitable ...
2026-02-13 10:32:42
|
High Current Capability HXY MOSFET AOKS40B65H1 with Maximum Junction Temperature of 175C and Low EMI
|
... coefficient in Vcesat, low EMI, low gate charge, and low saturation voltage. With a maximum junction temperature of 175C, it is suitable for UPS, ...
2026-02-13 10:32:41
|
HXY MOSFET APT68GA60B-HXY Featuring TO-247 Package and High Collector Current for Power Applications
|
... Overview The APT68GA60B is an Insulated Gate Bipolar Transistor (IGBT) from HUAXUANYANG HXY ELECTRONICS CO.,LTD. It offers easy paralleling ...
2026-02-13 10:32:39
|
Power electronics MOSFET HXY MOSFET IGW50N60H3-HXY with easy paralleling and low EMI characteristics
|
... is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for various power electronic applications. It features easy paralleling ...
2026-02-13 10:32:38
|
|
... Overview The IHW30N135R5 is an Insulated Gate Bipolar Transistor (IGBT) from HUAXUANYANG HXY ELECTRONICS CO.,LTD. It features easy paralleling ...
2026-02-13 10:32:37
|
Durable power device HXY MOSFET FGH40T65SHD-F155-HXY optimized for EV charger solar inverter and UPS
|
... The FGH40T65SHD-F155 is an Insulated Gate Bipolar Transistor (IGBT) designed for high-performance applications. It features easy paralleling ...
2026-02-13 10:32:36
|
|
... The NGTB40N65FL2WG is an Insulated Gate Bipolar Transistor (IGBT) designed for high-performance applications. It features easy paralleling ...
2026-02-13 10:32:36
|
|
... in VCESAT. It offers low EMI, low gate charge, and low saturation voltage, making it suitable for UPS, EV-Chargers, Solar String Inverters, and ...
2026-02-13 10:32:31
|
|
...Gate Bipolar Transistor (IGBT) designed for ignition and high-voltage/high-current switching applications. It features monolithic circuitry with ...
2026-02-13 10:32:03
|