221 - 230 of 278
multi function gate bipolar transistor
Selling leads
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... coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. With a maximum junction temperature of 175C, this device is suitable ...
2026-02-13 10:33:02
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... Overview The IXYH40N65C3H1 is an Insulated Gate Bipolar Transistor (IGBT) from HUAXUANYANG HXY ELECTRONICS CO.,LTD. It offers easy paralleling ...
2026-02-13 10:32:54
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IGW50N65H5AXKSA1 HXY MOSFET 650V 50A IGBT Ideal for UPS EV Charger and Solar String Inverter Systems
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... temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. Key features include a maximum junction temperature of ...
2026-02-13 10:32:51
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... Overview The AFGHL75T65SQ is an Insulated Gate Bipolar Transistor (IGBT) offering high performance and reliability. It features easy paralleling ...
2026-02-13 10:32:51
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... The FGH75T65SHD-F155 is an Insulated Gate Bipolar Transistor (IGBT) designed for high-performance applications. It features easy paralleling ...
2026-02-13 10:32:49
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... temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. This device is suitable for demanding applications such ...
2026-02-13 10:32:48
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... Overview The APT35GP120BG is an Insulated Gate Bipolar Transistor (IGBT) designed for high-reliability applications. It features easy paralleling ...
2026-02-13 10:32:47
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...IXYH40N120B3D1 is a 1200V, 40A Insulated Gate Bipolar Transistor (IGBT) designed for high-performance applications. It features easy paralleling ...
2026-02-13 10:32:45
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... is a 650V, 75A Insulated Gate Bipolar Transistor (IGBT) designed for high-performance applications. It features easy paralleling capability due to ...
2026-02-13 10:32:44
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... coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. This device is suitable for use in UPS, EV-Chargers, Solar String ...
2026-02-13 10:32:43
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