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multi function gate bipolar transistor
Selling leadsswitching device HXY MOSFET RGS80TSX2GC11-HXY optimized for conduction loss reduction and efficiency
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RGS80TSX2GC11 Insulated Gate Bipolar Transistor The RGS80TSX2GC11 is an Insulated Gate Bipolar Transistor (IGBT) manufactured using advanced Trench ...
2026-02-13 10:33:04
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Power semiconductor HXY MOSFET DGTD120T40S1PT-HXY with enhanced switching performance and durability
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Insulated Gate Bipolar Transistor DGTD120T40S1PT The DGTD120T40S1PT is an Insulated Gate Bipolar Transistor (IGBT) utilizing advanced Trench and Field ...
2026-02-13 10:32:47
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Product Overview The WCR03 Series SCR is a planar passivated SCR with a sensitive gate, available in both surface mountable (SOT223) and through-hole ...
2026-02-13 10:17:55
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Product Overview The WCR03 Series SCR is a planar passivated SCR with a sensitive gate, available in both surface mountable plastic (SOT223) and ...
2026-02-13 10:17:54
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switching IGBT BL BLG75T65FDL-F with 650V collector emitter voltage and 75A collector current rating
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Product Overview The BLG75T65FDL is an Insulated Gate Bipolar Transistor (IGBT) manufactured using advanced Trench Field Stop (T-FS) technology. It ...
2026-02-13 10:33:35
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... The BLG15T65FUA is an Insulated Gate Bipolar Transistor (IGBT) developed using advanced Trench Field Stop (T-FS) technology. This technology ...
2026-02-13 10:33:33
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power control HXY MOSFET IRGP4760-EPBF-HXY 650V 50A IGBT for renewable energy and automotive systems
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... temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. Key applications include UPS, EV-chargers, and solar ...
2026-02-13 10:33:26
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... coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. With a maximum junction temperature of 175C, this device is suitable ...
2026-02-13 10:33:26
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IGBT 650V 50A TO247 Package HXY MOSFET NGTB50N65FL2WG HXY Featuring Positive Temperature Coefficient
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... is a 650V, 50A Insulated Gate Bipolar Transistor (IGBT) designed for high-reliability applications. It features easy paralleling capability due to ...
2026-02-13 10:33:25
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... coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. This device is suitable for use in UPS, EV-Chargers, Solar String ...
2026-02-13 10:33:25
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