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650v low frequency igbt
Selling leads
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... machines. Key features include high breakdown voltage, Trench-Stop technology for high-speed switching and stable ruggedness, low VCEsat, and easy ...
2026-02-13 10:31:21
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...SPT50N65F1A1T8TL is a 650V, 50A Insulated Gate Bipolar Transistor (IGBT) designed for high-reliability applications. It features easy paralleling ...
2026-02-13 10:32:38
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...IGBT from Infineon, featuring TRENCHSTOPTM 5 technology and copacked with a RAPID 1 fast and soft antiparallel diode. It offers best-in-class ...
2026-02-13 10:32:23
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IGBT with 650V Breakdown Voltage and RAPID 1 Diode Infineon IKP08N65F5 Using TRENCHSTOP 5 Technology
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...IGBT from Infineon, featuring TRENCHSTOPTM 5 technology. It is copacked with a RAPID 1 fast and soft antiparallel diode, offering best-in-class ...
2026-02-13 10:32:13
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... are 650V / 20A Trench Field Stop IGBTs designed for high-reliability applications. They feature a maximum junction temperature of 175C, high ...
2026-02-13 10:32:01
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... Field Stop Trench IGBT Technology, this device offers high ruggedness specifically for motor control applications. Key features include a positive ...
2026-02-13 10:32:00
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...650V / 40A Trench Field Stop IGBT designed for high-speed switching applications. It offers high breakdown voltage for improved reliability, ...
2026-02-13 10:31:59
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...650V / 75A Trench Field Stop IGBT designed for high-speed switching applications. It offers high breakdown voltage for improved reliability, ...
2026-02-13 10:31:56
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.... It features a positive temperature coefficient for VCE(sat), a very soft and fast recovery anti-parallel diode, low EMI, and a maximum junction ...
2026-02-13 10:31:55
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...650V, 100A Trench Field Stop IGBT designed for high-speed switching applications. It features high breakdown voltage for improved reliability, ...
2026-02-13 10:31:54
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