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40a low frequency igbt
Selling leads
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...Insulated Gate Bipolar Transistor (IGBT) designed for high-reliability applications. It features easy paralleling capability due to a positive ...
2026-02-13 10:33:19
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IGBT transistor module HXY MOSFET IRGP4790-EPBF-HXY suitable for UPS EV chargers and solar inverters
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... coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. This device is suitable for use in UPS, EV-Chargers, Solar String ...
2026-02-13 10:33:18
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... coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. With a maximum junction temperature of 175C, this device is suitable ...
2026-02-13 10:33:16
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...Insulated Gate Bipolar Transistor (IGBT) designed for high-performance applications. It features easy paralleling capability due to a positive ...
2026-02-13 10:33:13
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...temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. This device is suitable for use in UPS, EV-Chargers, Solar ...
2026-02-13 10:33:09
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... capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. Key applications include UPS...
2026-02-13 10:33:08
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... Insulated Gate Bipolar Transistor (IGBT) designed for high-reliability applications. It features easy paralleling capability due to a positive ...
2026-02-13 10:33:08
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...Gate Bipolar Transistor (IGBT) designed for applications requiring high reliability and performance. It features easy paralleling capability due to ...
2026-02-13 10:33:07
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...an Insulated Gate Bipolar Transistor (IGBT) from HUAXUANYANG HXY ELECTRONICS CO.,LTD. It offers easy paralleling capability due to a positive ...
2026-02-13 10:33:04
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... coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. With a maximum junction temperature of 175C, this device is suitable ...
2026-02-13 10:33:02
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