201 - 210 of 914
40a low frequency igbt
Selling leads1200V 25A Trench Field Stop IGBT SPTECH SPT25N120U1 with Low VCEsat and Short Circuit Withstand Time
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...IGBT designed for high reliability and performance. It features Trench-Stop Technology for high-speed switching, enhanced ruggedness, and a short ...
2026-02-13 10:31:25
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... high-speed switching, enhanced ruggedness with temperature stability, low VCEsat, and easy parallel switching capability due to a positive ...
2026-02-13 10:31:21
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power control HXY MOSFET IRGP4760-EPBF-HXY 650V 50A IGBT for renewable energy and automotive systems
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... temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. Key applications include UPS, EV-chargers, and solar ...
2026-02-13 10:33:26
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IGBT 650V 50A TO247 Package HXY MOSFET NGTB50N65FL2WG HXY Featuring Positive Temperature Coefficient
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...50A Insulated Gate Bipolar Transistor (IGBT) designed for high-reliability applications. It features easy paralleling capability due to a positive ...
2026-02-13 10:33:25
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... coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. This device is suitable for use in UPS, EV-Chargers, Solar String ...
2026-02-13 10:33:25
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...650V, 160A Insulated Gate Bipolar Transistor (IGBT) designed for high-power applications. It features easy paralleling capability due to a positive ...
2026-02-13 10:33:24
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...temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. This device is suitable for use in UPS, EV-Chargers, Solar ...
2026-02-13 10:33:22
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... coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. Key applications include UPS, EV-Chargers, Solar String Inverters, ...
2026-02-13 10:33:22
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...50A Insulated Gate Bipolar Transistor (IGBT) designed for high-power applications. It features easy paralleling capability due to its positive ...
2026-02-13 10:33:22
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650 Volt 70 Amp IGBT HXY MOSFET MIW40N65RA-BP-HXY TO247 Package Designed for Solar Inverters and UPS
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...coefficient in Vcesat, low EMI, low gate charge, and low saturation voltage. With a maximum junction temperature of 175C, this device is suitable ...
2026-02-13 10:33:21
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