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40a low frequency igbt
Selling leads
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... easy paralleling capability due to a positive temperature coefficient in VCESAT. Its low EMI and maximum junction temperature of 175C make it ...
2026-02-13 10:33:11
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High current IGBT HXY MOSFET RGS80TS65HRC11-HXY with low gate charge and easy paralleling capability
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... coefficient in Vcesat, low EMI, low gate charge, and low saturation voltage. With a maximum junction temperature of 175C, this device is suitable ...
2026-02-13 10:33:10
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... coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. This device is suitable for use in UPS, EV-Charger, Solar String ...
2026-02-13 10:33:06
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HXY MOSFET RGTH80TS65GC13 IGBT transistor featuring low EMI and maximum junction temperature of 175C
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... Transistor (IGBT) from HUAXUANYANG HXY ELECTRONICS CO.,LTD. Designed for high-performance applications, this device offers easy paralleling ...
2026-02-13 10:33:05
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... coefficient in VCESAT, low gate charge, and low saturation voltage. With a maximum junction temperature of 175C and RoHS compliance, this device ...
2026-02-13 10:32:47
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...soft-switching TRENCHSTOPTM IGBT 6, featuring Trench and Fieldstop technology. It offers high efficiency in both hard switching and resonant ...
2026-02-13 10:32:45
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...Insulated Gate Bipolar Transistor (IGBT) designed for high-performance applications. It features easy paralleling capability due to its positive ...
2026-02-13 10:32:36
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...IGBT module featuring fourth-generation Trench/Fieldstop IGBT4 and an emitter-controlled 4 diode with NTC temperature detection. It offers low ...
2026-02-13 10:32:11
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...IGBT module designed for high-performance applications such as motor drivers, AC/DC servo drive amplifiers, and UPS systems. It offers low ...
2026-02-13 10:31:58
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Product Overview The LGM200HF120S4F1A is a high-performance IGBT module designed for demanding applications. It features a low VCEsat with a positive ...
2026-02-13 10:31:56
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