161 - 170 of 914
40a low frequency igbt
Selling leadsHigh current onsemi FGH75T65SHDTL4 IGBT designed for UPS telecom ESS and solar inverter applications
|
...IGBT technology, ON Semiconductor's new series of field stop 3rd generation IGBTs offer optimum performance for solar inverter, UPS, welder, ...
2026-02-13 10:31:48
|
|
...IGBT Leveraging novel field stop IGBT technology, this 3rd generation IGBT offers optimized performance for applications such as solar inverters, ...
2026-02-13 10:31:36
|
|
... welders, microwave ovens, telecom, ESS, and PFC. These devices are designed for scenarios requiring low conduction and switching losses, offering ...
2026-02-13 10:31:33
|
|
... turn-off switching loss due to fast turn-off times, and very smooth turn-off current waveforms that reduce EMI. This IGBT also provides better ...
2026-02-14 04:32:32
|
|
... Insulated Gate Bipolar Transistor (IGBT) designed for high-reliability applications. It features easy paralleling capability due to a positive ...
2026-02-13 10:33:20
|
|
...an Insulated Gate Bipolar Transistor (IGBT) from HUAXUANYANG HXY ELECTRONICS CO.,LTD. It offers easy paralleling capability due to its positive ...
2026-02-13 10:33:20
|
HXY MOSFET IGW40N60H3 HXY IGBT Featuring Low Saturation Voltage and Positive Temperature Coefficient
|
...Insulated Gate Bipolar Transistor (IGBT) designed for high-performance applications. It features easy paralleling capability due to a positive ...
2026-02-13 10:33:18
|
|
... Gate Bipolar Transistor (IGBT) designed for high-efficiency applications. It features high input impedance, low switching losses, and a low ...
2026-02-13 10:33:16
|
Powerful HXY MOSFET FGHL50T65SQ-HXY 650V 50A IGBT with Easy Paralleling and Low Gate Charge Features
|
... temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. This device is suitable for use in UPS, EV-Chargers, and ...
2026-02-13 10:33:15
|
Power Switching HXY MOSFET IXYH40N65B3D1-HXY IGBT Module with Low EMI and High Temperature Tolerance
|
...an Insulated Gate Bipolar Transistor (IGBT) from HUAXUANYANG HXY ELECTRONICS CO.,LTD. It offers easy paralleling capability due to a positive ...
2026-02-13 10:33:14
|