131 - 140 of 914
40a low frequency igbt
Selling leads
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... commutation. It utilizes TRENCHSTOP technology for excellent ruggedness, stable temperature behavior, low VCEsat, and easy parallel switching. ...
2026-02-13 10:32:24
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...IGBT Modules The MIP25R12E1TN is a 1200V, 25A IGBT module designed for various power electronics applications. It features low switching losses, ...
2026-02-13 10:31:51
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...IGBT designed for high-speed switching applications. It offers very low VCEsat, low turn-off losses, and ultra-low gate charge (Qg), making it ...
2026-02-13 10:31:23
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600V IGBT VBsemi Elec VBP16I80 Featuring Ultra Low Gate Charge for Telecommunications Power Supplies
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...), and is avalanche energy rated (UIS). This IGBT is suitable for a wide range of applications including telecommunications power supplies, ...
2026-02-13 10:31:19
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...VBE16I07 is a 600V Trench and Fieldstop IGBT designed for high-speed switching applications. It features very low VCEsat, low turn-off losses, ...
2026-02-13 10:31:14
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IGBT Module MG35P12P3 S M323 Featuring Low VCEsat and Fast Soft Recovery Diode for Power Electronics
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... a positive temperature coefficient, and includes a fast and soft recovery anti-parallel FWD. Its low inductance case and high short circuit ...
2026-02-13 10:31:13
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...IGBT module featuring Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode with PressFIT and NTC. It offers increased blocking voltage capability ...
2026-02-13 10:32:42
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...IGBT designed for high-efficiency applications. It features high input impedance, low switching losses, low saturation voltage (VCE(SAT)), and low ...
2026-02-13 10:32:41
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...IGBT Power Semiconductor with High Input Impedance in TO-247 Package Product Description: The Inverter IGBT has a Collector-Emitter Voltage ranging ...
2026-05-22 07:30:14
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...Gate Bipolar Transistor (IGBT) designed for high-reliability applications. It features easy paralleling capability due to a positive temperature ...
2026-02-13 10:33:25
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