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Guangdong Lingxun Microelectronics Co., Ltd
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power consumption low rds on mosfet

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Guangdong Lingxun Microelectronics Co., Ltd

City: dongguan

Province/State:guangdong

Country/Region:china

Tel:86-189-8872-0515

Contact Person:
Mrs.Qinqin
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power consumption low rds on mosfet

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... MAX Typ Typ CS10N50A2 TO-220F N 10 500 ±30 2 4 460 550 Product Description: One of the standout features of the CS10N50A2 MOSFET is its low ON ... 2025-02-08 13:29:39
Iniaturization And Higher Efficiency 11A 650V 350mΩ Super Junction MOSFET N-channel Super Junction MOSFET Part No.:LCS65R380F Package:TO-220F MAIN ... 2025-07-11 00:37:58
... Resistance: Low Rds(ON) Material: Silicon Power Consumption: Low Power Loss Thermal Robustness Motor Driving Advanced Trench Technology Technical ... 2025-07-11 00:37:58
...MOSFETs with Guaranteed Low Rds(ON) Resistance LG80N10AP Part Number Package Die Channel ID (A) VDSS (V) VGSS (V) VGS(th)(V) RDS(ON) 10V(mΩ) RDS(ON... 2025-02-08 13:28:59
... power consumption. The use of high-quality silicon material ensures reliable performance and long-term durability. With its low power loss, this ... 2025-07-11 00:37:58
.... With low power loss and low gate charge, this MOSFET helps to minimize switching loss and reduce power consumption, making it an ideal choice for ... 2025-07-11 00:37:58
...means that it consumes less energy compared to other electronic components, making it an excellent choice for energy-efficient devices and ... 2025-07-11 00:37:58
...Low Voltage MOSFET For Sensor Interfaces Automotive Electronics​ Product Description: One of the standout features of our MOSFET product is its low ... 2025-07-11 00:37:58
... TYP MAX Typ Typ LG120N10AP TO-220C 1 N 120 100 ±20 2 4 4.5 5.62 Product Description: One of the primary advantages of using this MOSFET is that it ... 2025-02-08 13:28:59
...Power Efficiency Silicon Low Voltage MOSFET For TO-220F Package LG120N085AP Part Number Package Die Channel ID (A) VDSS (V) VGSS (V) VGS(th)(V) RDS... 2025-04-01 14:35:08
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