China Inverter IGBT manufacturer
Guangdong Lingxun Microelectronics Co., Ltd
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low leakage current switching diode

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Guangdong Lingxun Microelectronics Co., Ltd

City: dongguan

Province/State:guangdong

Country/Region:china

Tel:86-189-8872-0515

Contact Person:
Mrs.Qinqin
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low leakage current switching diode

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...Low Leakage Cool Mos The Semiconductor For Power Applications This particular product is a Type N semiconductor with low junction capacitance, ... 2025-07-11 00:37:58
Product Description: Power High Temperature Resistant Low Leakage N Channel IGBT Our High Voltage Power Semiconductors are capable of handling high ... 2025-07-11 00:37:58
Schottky Barrier Diodes For Adapter Applications Switching power supply *, *::before, *::after {box-sizing: border-box;}* {margin: 0;}html, body ... 2025-07-11 00:37:58
30A 650V 99mΩ Low Conduction Loss Fast Recovery Time Cool Mosfet N-channel Super Junction MOSFET Part No.:LCF65R075B Package:TO-247 MAIN CHARACTERISTI... 2025-02-12 07:30:10
Product Description: Our High Voltage Power Semiconductors are characterized by their High Light, Rapid Switching Capabilities, and Robust Thermal ... 2025-07-11 00:37:58
Product Description: One of the key features of High Voltage Power Semiconductors is their ability to handle high voltages and currents efficiently. ... 2025-07-11 00:37:58
... 1 16 200 8 0.92 0.98 0.01 1 - - - 160 35 150 Product Description: One of the key features of the MUR Fast Recovery Diode is its low forward ... 2025-02-08 13:30:59
...Diodes Ultra High Frequency Circuits Part Number Package Die Io (A) VBR @IR VF(25℃) IR(25℃) VF(125℃) IR (125℃ IFSM (A) Trr Tj (℃) Min (V) If (A) ... 2025-07-11 00:37:58
...Diode Reliability FRD For Power Tool Part Number Package Die Io (A) VBR @IR VF(25℃) IR(25℃) VF(125℃) IR (125℃ IFSM (A) Trr Tj (℃) Min (V) If (A) ... 2025-07-11 00:37:58
... (nS) MUR1660FCT TO-220F 2 16 600 8 1.30 1.60 0.015 1 - - - 110 35 150 Product Description: Our Fast Recovery Diodes are designed to have a low ... 2025-07-11 00:37:58
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