China Inverter IGBT manufacturer
Guangdong Lingxun Microelectronics Co., Ltd
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high power mosfet transistors

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Guangdong Lingxun Microelectronics Co., Ltd

City: dongguan

Province/State:guangdong

Country/Region:china

Tel:86-189-8872-0515

Contact Person:
Mrs.Qinqin
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high power mosfet transistors

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... power loss and high efficiency. The device's package type is TO-247, which is a popular package type in the electronics industry. Its TO-247 ... 2025-07-11 00:37:58
...) • Ultra Low On-Resistance • Reliable and Rugged Applications: • SMPS Q1.Who are we? A:We are based in Guangdong, China,factory start from 2012,is ... 2025-07-11 00:37:58
...Power Mosfets Electronic Devices Improved System Efficiency Product Description: Our Low Voltage MOSFET boasts of a low on-resistance, which is ... 2025-07-11 00:37:58
...Power Transistor IGBT For High-Power Electronic Controls Product Description: The High-Power IGBT is packaged in a TO-247 package type, which is ... 2025-07-11 00:37:58
High Temperature Tolerances Silicon Carbide MOSFET For Power Supply Units Product Description: The Lingxun SiC MOSFET is perfect for power inverters, ... 2025-07-11 00:37:58
...Power Consumption SMPS Super Junction MOSFET For High Power Application Product Description: One of the key features of this MOSFET is its very ... 2025-07-11 00:37:58
... Typ CS5N50A2 TO-220F N 5 500 ±30 2 4 1510 1600 15 545 Product Description: The Gate-Source Voltage (Vgs) of this MOSFET is ±30V, which makes it ... 2025-02-08 13:29:39
... MAX Typ Typ CS2N65A2 TO-220F N 2 650 ±30 3 4 4000 4500 11 295 Product Description: The High Voltage MOSFET product features a gate-source voltage ... 2025-02-08 13:29:30
...Power Mosfet N Channel For Power Management Id:80A Vdss:30V Rdson-typ(@Vgs=10V):3.82mΩ Features: Advanced Trench Technology Excellent RDS(ON) and ... 2025-07-11 00:37:58
...High Power Semiconductor For Industrial Power Supplies N-channel Super Junction MOSFET Part No.:LC60R190D Package:TO-220F MAIN CHARACTERISTICS ID... 2025-07-11 00:37:58
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