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CVD Furnace Deposition Equipment for Semiconductor Material Preparation Thin Film

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Hunan Jingtan Automation Equipment Co., LTD.

City: zhuzhou

Province/State:hunan

Country/Region:china

Tel:86-0731-22498108

Contact Person:
Ms.Zola Liu
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CVD Furnace Deposition Equipment for Semiconductor Material Preparation Thin Film

Packaging Details wooden case packing
Supply Ability 30 Piece/Pieces per Quarter
Price USD12,000-100,000/SET
Brand Name Jingtan
Certification CE
Minimum Order Quantity 1 set
Delivery Time 60 days
Payment Terms L/C/T/T
place of origin Hunan, China
type Induction Furnace
usage deposition furnace
video outgoing-inspection Provided
machinery test report Provided
core components PLC
brand name Jingtan
voltage 380
weight (t) 2 T
power (kw) 220
key selling points Competitive Price
Design Temperature (℃) 1250-2200
Woring temperature 900-1200℃
Pressure rise rate (Pa/h) 0.67Pa/h(150Pa/24h)
Heating method Resistance/induction
Working atmosphere vacuum/CH4/C3H6/H2/N2/Ar
Furnace type Square/roundVertical/Horizontal
Furnace cooling mode furnace shell water cooling
Infrared instrument single/double colorimetric
Temperature uniformity ±5
Limit vacuum Degree(Pa) 1-100
Marketing Type Ordinary Product
Warranty of core components 1 Year
Applicable Industries Other, semiconductor
Detailed Product Description
Specification: 
Vacuum deposition furnace:
Mainly used for the preparation of carbon-carbon composite materials, and the deposition furnace is mainly used for the preparation of pyrolytic carbon coating on the surface of graphite, semiconductor devices and heat-resistant scour materials.
Parameter /Model No.
JT-0305-C
JT-0505-C
JT-0608-C
JT-0608-C
JT-0812-C
JT-1120-C
JT-1218-C
JT-1520-C
Working Zone Size
φ×H(mm)
300×500
500×500
600×800
600×1200
800×1200
1100×2000
1200×1800
1500×2000
Highest Temperature
(℃)
2300
2300
2300
2300
2300
2300
2300
2300
Temperature uniformity(℃)
±5
±5
±5/±7.5
±7.5/±10
±7.5/±10
±10/±15
±10/±15
±15/±20
Limit Vacuum Degree(Pa)
1-100
1-100
1-100
1-100
1-100
1-100
1-100
1-100
Limit Vacuum Degree(Pa)
0.67
0.67
0.67
0.67
0.67
0.67
0.67
0.67
Heating method
Resistance/induction
Resistance/induction
Resistance/induction
Resistance/induction
Resistance/induction
Resistance/induction
Resistance/induction
Resistance/induction
Design temperature
1250℃/1650℃/1800℃/2200℃
Common temperature
 900~1200℃
Vacuum degree
< 50Pa
Pressure rise rate
 6.67pA /h(or 150Pa/24h) in cold state of empty furnace
Heating mode
graphite resistance heating or induction heating, independent temperature control, good temperature uniformity
Atmosphere medium
 vacuum /CH4/C3H6/H2/N2/Ar
Gas control mode
mass flow meter control, multi-channel gas path, uniform flow field, no deposition dead Angle, good deposition effect;Multi-stage and efficient exhaust treatment system, environmentally friendly, easy to clean up
 Furnace type
square, round, vertical or horizontal structure (non-standard design), fully enclosed deposition chamber, good sealing effect,
strong anti-pollution ability;
Furnace cooling mode
furnace shell water cooling, external circulation quick cooling system can be selected, short cooling time, high production
efficiency;
Structure form
 horizontal - side discharge, vertical - up/down discharge
Locking mode
manual/automatic
Shell material
inner stainless steel/all stainless steel
 Insulation material
carbon felt/graphite felt/carbon fiber cured felt
Infrared instrument
single colorimetric/double colorimetric
Power supply
KGPS/IGBT(only suitable for medium frequency heating)
Product parameter:
 
 
Product Tags: Deposition Equipment For Semiconductor Material   CVD Furnace For Semiconductor Material  
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