Innotion 20W 6000MHz High Efficiency GaN HEMT RF Power Transistor Amplifier IC
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Innotion High Efficiency 20W Gallium Nitride 28V DC-6GHz 20W RF Power Transistor Product Description Innotion’s YP601820T is a 20-watt, unmatched gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities with frequency up to 6000MHz. The transistor is supplied in a ceramic /metal flange package.
Features
Company Information Suzhou Industrial Park. Founded in 2010. The only official shop! We
sell our own products at the best price, such as WiFi amplifier,
VCO, sweep signal source, wireless card group and other product
lines; Our Services We stand by our commitment to ensure first class customer service. |
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| Product Tags: 20W GaN HEMT RF amplifier 6000MHz high efficiency power transistor Innotion RF power amplifier IC |
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