Flash Memory IC Chip MT28F800B5WP-8T - Micron Technology - FLASH MEMORY
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Quick Detail: FLASH MEMORY
Description:
The MT28F008B5 (x8) and MT28F800B5 (x16/x8) are nonvolatile, electrically block-erasable (Flash), programmable read-only memories containing 8,388,608 bits organized as 524,288 words (16 bits) or 1,048,576 bytes (8 bits). Writing or erasing the device is done with a 5V VPP voltage, while all operations are performed with a 5V VCC. Due to process technology advances, 5V VPP is optimal for application and production programming. These devices are fabricated with Micron’s advanced 0.18µm CMOS floating-gate process. The MT28F008B5 and MT28F800B5 are organized into eleven separately erasable blocks. To ensure that critical firmware is protected from accidental erasure or overwrite, the devices feature a hardware-protected boot block. This block may be used to store code implemented in low-level system recovery. The remaining blocks vary in density and are written and erased with no additional security measures.
Applications:
• Eleven erase blocks: 16KB/8K-word boot block (protected) Two 8KB/4K-word parameter blocks • Eight main memory blocks • Smart 5 technology (B5): 5V ±10% VCC 5V ±10% VPP application/ production programming1 • Advanced 0.18µm CMOS floating-gate process • Compatible with 0.3µm Smart 5 device • Address access time: 80ns • 100,000 ERASE cycles • Industry-standard pinouts • Automated write and erase algorithm • Two-cycle WRITE/ERASE sequence • TSOP and SOP packaging options • Byte- or word-wide READ and WRITE (MT28F800B5, 1 Meg x 8/512K x 16)
Specifications:
Competitive Advantage:
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Product Tags: serial flash memory chip cmos flash memory |
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