IS41LV16100B-60KL- 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

IS41LV16100B-60KL - Integrated Silicon Solution, Inc - 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

Quick Detail:

1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

Description:

The ISSI IS41LV16100B is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word.

These features make the IS41LV16100B ideally suited for high-bandwidth graphics, digital signal processing, highperformance computing systems, and peripheral applications.

The IS41LV16100B is packaged in a 42-pin 400-mil SOJ and 400-mil 50- (44-) pin TSOP (Type II).

Applications:

• TTL compatible inputs and outputs; tristate I/O

• Refresh Interval:

— Auto refresh Mode: 1,024 cycles /16 ms

— RAS-Only, CAS-before-RAS (CBR), and Hidden

• JEDEC standard pinout

• Single power supply: 3.3V ± 10%

• Byte Write and Byte Read operation via two CAS

• Industrial Temperature Range: -40oC to +85oC

• Lead-free available

Specifications:

Competitive Advantage:

Warranty :180 days !
Free shipping: Order over $1000 win a free shipment fee
(goods weight below 3Kg) ,during 20130901-20130930 .

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