MIG10J504H - TOSHIBA - MITSUBISHI SEMICONDUCTOR
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Quick Detail:
MITSUBISHI SEMICONDUCTOR <Intelligent Power Module>
Description:
MITSUBISHI SEMICONDUCTOR <Intelligent Power Module>
Applications:
x The 4th generation trench gate thin wafer NPT IGBT is adopted. x FRD is builtin. x I/O input: logic level (3.3 V / 5 V) x The level shift circuit by high-voltage IC is builtin. x The simplification of a high side driver power supply is possible by the bootstrap system. x Short circuit protection for a lower arm IGBT and the power supply under voltage protection function are builtin. x Short circuit protection state for a lower arm IGBT is outputted. x The lower arm emitter terminal has been independent by each phase for the purpose ofthe current detection at the time of vector control. x Low thermal resistance by adoption of original high thermal conduction resin.
Specifications:
Competitive Advantage:
Warranty :180 days !
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Product Tags: high power igbt integrated circuit chips |