IGBT Power Module MG30J6ES11- TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

Quick Detail:

TOSHIBA GTR Module Silicon N Channel IGBT

Description:

High Power Switching Applications

Motor Control Applications

Applications:

[1]The electrodes are isolated from case.

[1]High input impedance

[1]Includes a complete half bridge in one package.

[1]Enhancement-mode

[1]High speed : tf= 0.30µs (Max.) (IC = 300A)

trr = 0.15µs (Max.) (IF = 300A)

[1]Low saturation voltage

: VCE (sat) = 2.70V (Max.) (IC = 300A)

Specifications:

Competitive Advantage:

Warranty :180 days !
Free shipping: Order over $1000 win a free shipment fee
(goods weight below 3Kg) ,during 20130901-20130930 .

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